| No. |
Part Name |
Description |
Manufacturer |
| 5791 |
IRF823 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 5792 |
IRF823 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 5793 |
IRF8252 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters |
International Rectifier |
| 5794 |
IRF8252PBF-1 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package |
International Rectifier |
| 5795 |
IRF8252TRPBF |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC converters |
International Rectifier |
| 5796 |
IRF8252TRPBF-1 |
25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package |
International Rectifier |
| 5797 |
IRF830 |
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 5798 |
IRF830 |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 5799 |
IRF830 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 5800 |
IRF8301M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
| 5801 |
IRF8301MTRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
| 5802 |
IRF8302M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. |
International Rectifier |
| 5803 |
IRF8302MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. |
International Rectifier |
| 5804 |
IRF8304M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. |
International Rectifier |
| 5805 |
IRF8304MTR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. |
International Rectifier |
| 5806 |
IRF8306M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
| 5807 |
IRF8306MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
| 5808 |
IRF8308M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. |
International Rectifier |
| 5809 |
IRF8308MTR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. |
International Rectifier |
| 5810 |
IRF830A |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 5811 |
IRF830AL |
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 5812 |
IRF830APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 5813 |
IRF830AS |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 5814 |
IRF830L |
HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
International Rectifier |
| 5815 |
IRF830PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 5816 |
IRF830S |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 5817 |
IRF830STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 5818 |
IRF830STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 5819 |
IRF831 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 5820 |
IRF8313 |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
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