No. |
Part Name |
Description |
Manufacturer |
5791 |
JM38510/12501BGA |
Monolithic Sample and Hold Circuit 8-TO-99 -55 to 125 |
Texas Instruments |
5792 |
JM38510/12501SGA |
Monolithic Sample and Hold Circuit |
National Semiconductor |
5793 |
JM38510/12501SGA |
Monolithic Sample and Hold Circuit |
National Semiconductor |
5794 |
JM38510/12501SGA |
Monolithic Sample and Hold Circuit |
National Semiconductor |
5795 |
JM38510/12501SGA |
Monolithic Sample and Hold Circuit 8-TO-99 -55 to 125 |
Texas Instruments |
5796 |
JM38510/32701B2A |
Dual 4-Bit Decade And Binary Counters |
Texas Instruments |
5797 |
JM38510/32701BEA |
Dual 4-Bit Decade And Binary Counters |
Texas Instruments |
5798 |
JM38510/36001B2A |
10-Line To 4-Line And 8-Line To 3-Line Priority Encoders |
Texas Instruments |
5799 |
JM38510/36001BEA |
10-Line To 4-Line And 8-Line To 3-Line Priority Encoders |
Texas Instruments |
5800 |
JM38510/36001BFA |
10-Line To 4-Line And 8-Line To 3-Line Priority Encoders |
Texas Instruments |
5801 |
JM38510_12501BG |
Monolithic Sample and Hold Circuit |
National Semiconductor |
5802 |
JM38510_12501SG |
Monolithic Sample and Hold Circuit |
National Semiconductor |
5803 |
JN5161 |
RF4CE and IEEE802.15.4 wireless microcontroller with 64 kB Flash, 8 kB RAM |
NXP Semiconductors |
5804 |
K10 |
Heatsink, shape and dimensions |
RFT |
5805 |
K10B |
Heatsink, shape and dimensions |
RFT |
5806 |
K200 |
Heatsink, shape and dimensions |
RFT |
5807 |
K200B |
Heatsink, shape and dimensions |
RFT |
5808 |
K25 |
Heatsink, shape and dimensions |
RFT |
5809 |
K4D263238A |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
5810 |
K4D263238A-GC33 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
5811 |
K4D263238A-GC36 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
5812 |
K4D263238A-GC40 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
5813 |
K4D263238A-GC45 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
5814 |
K4D263238A-GC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
5815 |
K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
5816 |
K4D263238D-QC40 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
5817 |
K4D263238D-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
5818 |
K4D263238E |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
5819 |
K4D263238E-GC25 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
5820 |
K4D263238E-GC2A |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
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