| No. |
Part Name |
Description |
Manufacturer |
| 5791 |
AS7C33256PFS36A-166TQI |
3.3V 256K x 36 pipeline burst synchronous SRAM, clock speed - 166 MHz |
Alliance Semiconductor |
| 5792 |
AS7C33512PFS16A-100TQC |
3.3V 512K x 16 pipeline burst synchronous SRAM, clock speed - 100MHz |
Alliance Semiconductor |
| 5793 |
AS7C33512PFS16A-100TQI |
3.3V 512K x 16 pipeline burst synchronous SRAM, clock speed - 100MHz |
Alliance Semiconductor |
| 5794 |
AS7C33512PFS16A-133TQC |
3.3V 512K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz |
Alliance Semiconductor |
| 5795 |
AS7C33512PFS16A-133TQI |
3.3V 512K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz |
Alliance Semiconductor |
| 5796 |
AS7C33512PFS16A-150TQC |
3.3V 512K x 16 pipeline burst synchronous SRAM, clock speed - 150MHz |
Alliance Semiconductor |
| 5797 |
AS7C33512PFS16A-150TQI |
3.3V 512K x 16 pipeline burst synchronous SRAM, clock speed - 150MHz |
Alliance Semiconductor |
| 5798 |
AS7C33512PFS16A-166TQC |
3.3V 512K x 16 pipeline burst synchronous SRAM, clock speed - 166MHz |
Alliance Semiconductor |
| 5799 |
AS7C33512PFS16A-166TQI |
3.3V 512K x 16 pipeline burst synchronous SRAM, clock speed - 166MHz |
Alliance Semiconductor |
| 5800 |
AS7C33512PFS18A-100TQC |
3.3V 512K x 18 pipeline burst synchronous SRAM, clock speed - 100MHz |
Alliance Semiconductor |
| 5801 |
AS7C33512PFS18A-100TQI |
3.3V 512K x 18 pipeline burst synchronous SRAM, clock speed - 100MHz |
Alliance Semiconductor |
| 5802 |
AS7C33512PFS18A-133TQC |
3.3V 512K x 18 pipeline burst synchronous SRAM, clock speed - 133MHz |
Alliance Semiconductor |
| 5803 |
AS7C33512PFS18A-133TQI |
3.3V 512K x 18 pipeline burst synchronous SRAM, clock speed - 133MHz |
Alliance Semiconductor |
| 5804 |
AS7C33512PFS18A-150TQC |
3.3V 512K x 18 pipeline burst synchronous SRAM, clock speed - 150MHz |
Alliance Semiconductor |
| 5805 |
AS7C33512PFS18A-150TQI |
3.3V 512K x 18 pipeline burst synchronous SRAM, clock speed - 150MHz |
Alliance Semiconductor |
| 5806 |
AS7C33512PFS18A-166TQC |
3.3V 512K x 18 pipeline burst synchronous SRAM, clock speed - 166MHz |
Alliance Semiconductor |
| 5807 |
AS7C33512PFS18A-166TQI |
3.3V 512K x 18 pipeline burst synchronous SRAM, clock speed - 166MHz |
Alliance Semiconductor |
| 5808 |
ASY81 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 5809 |
AT17LV002-10JC |
2 Mbit CPLD boot EEPROM. Speed 15 MHz. |
Cypress |
| 5810 |
AT17LV002-10JI |
2 Mbit CPLD boot EEPROM. Speed 10 MHz. |
Cypress |
| 5811 |
AT17LV010-10JC |
1 Mbit CPLD boot EEPROM. Speed 15 MHz. |
Cypress |
| 5812 |
AT17LV010-10JI |
1 Mbit CPLD boot EEPROM. Speed 10 MHz. |
Cypress |
| 5813 |
AT17LV512-10JC |
512 Kbit CPLD boot EEPROM. Speed 15 MHz. |
Cypress |
| 5814 |
AT17LV512-10JI |
512 Kbit CPLD boot EEPROM. Speed 10 MHz. |
Cypress |
| 5815 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 5816 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 5817 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 5818 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 5819 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 5820 |
AT22V10-20DM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
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