| No. |
Part Name |
Description |
Manufacturer |
| 5791 |
MPS2906A |
Silicon PNP epitaxial transistor (PCT process) |
TOSHIBA |
| 5792 |
MPS2907 |
Silicon PNP epitaxial transistor (PCT process) |
TOSHIBA |
| 5793 |
MPS2907A |
Silicon PNP epitaxial transistor (PCT process) |
TOSHIBA |
| 5794 |
MT3S03AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5795 |
MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5796 |
MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5797 |
MT3S04AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5798 |
MT3S04AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5799 |
MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5800 |
MT3S05T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5801 |
MT3S06S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5802 |
MT3S06T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5803 |
MT3S06U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5804 |
MT3S07S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5805 |
MT3S07T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5806 |
MT3S07U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5807 |
MT3S08T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5808 |
MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 5809 |
MT3S111P |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 5810 |
MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 5811 |
MT3S113 |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 5812 |
MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 5813 |
MT3S113TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 5814 |
MT3S150P |
Gallium-Arsenide heterojunction bipolar transistor |
TOSHIBA |
| 5815 |
MT3S15TU |
Radio-frequency bipolar transistor |
TOSHIBA |
| 5816 |
MT3S16U |
Radio-frequency bipolar transistor |
TOSHIBA |
| 5817 |
MT3S19 |
Radio-frequency bipolar transistor |
TOSHIBA |
| 5818 |
MT3S19R |
Radio-frequency bipolar transistor |
TOSHIBA |
| 5819 |
MT3S19TU |
Radio-frequency bipolar transistor |
TOSHIBA |
| 5820 |
MT3S20P |
Radio-frequency bipolar transistor |
TOSHIBA |
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