No. |
Part Name |
Description |
Manufacturer |
5821 |
K4M64163PH-RBF1L |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
5822 |
K4M64163PH-RBF75 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
5823 |
K4M64163PH-RBF90 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
5824 |
K4M64163PH-RF1L |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
5825 |
K4M64163PH-RF75 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
5826 |
K4M64163PH-RF90 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
5827 |
K4M64163PH-RG |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
5828 |
K4N26323AE |
128Mbit GDDR2 SDRAM |
Samsung Electronic |
5829 |
K4N26323AE-GC20 |
128Mbit GDDR2 SDRAM |
Samsung Electronic |
5830 |
K4N26323AE-GC22 |
128Mbit GDDR2 SDRAM |
Samsung Electronic |
5831 |
K4N26323AE-GC25 |
128Mbit GDDR2 SDRAM |
Samsung Electronic |
5832 |
K4N56163QF |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
5833 |
K4N56163QF-GC |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
5834 |
K4N56163QF-GC25 |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
5835 |
K4N56163QF-GC30 |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
5836 |
K4N56163QF-GC37 |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
5837 |
K4R271669A |
Direct RDRAM |
Samsung Electronic |
5838 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
5839 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
5840 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
5841 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
5842 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
5843 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
5844 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
5845 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
5846 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
5847 |
K4R271669B |
Direct RDRAM |
Samsung Electronic |
5848 |
K4R271669B |
Direct RDRAM� Data Sheet |
Samsung Electronic |
5849 |
K4R271669B-MCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
5850 |
K4R271669B-MCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
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