No. |
Part Name |
Description |
Manufacturer |
5821 |
MM3003 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V |
Motorola |
5822 |
MM3725 |
NPN silicon annular transistor, complementary to PNP MM3726 |
Motorola |
5823 |
MM4018 |
PNP silicon RF power transistor, 0.5W 175MHz |
Motorola |
5824 |
MMBR536 |
PNP Silicon High Frequency Transistor, low noise, high RF gain |
Motorola |
5825 |
MMBR911 |
NPN Silicon High Frequency Transistor, low noise, high RF gain |
Motorola |
5826 |
MMBT2222A |
NPN Epitaxial Silicon Transistor, SOT-23 case marking 1P |
Samsung Electronic |
5827 |
MMBT2222A-G |
General Purpose Transistor, VCBO=75V, VCEO=40V, VEBO=6V, IC=0.6A |
Comchip Technology |
5828 |
MMBT2222A-HF |
Halogen Free Transistor, VCBO=75V, VCEO=40V, VEBO=6V, IC=0.6mA |
Comchip Technology |
5829 |
MMBT2484 |
NPN Epitaxial Silicon Transistor, SOT-23 case, marking 1U |
Samsung Electronic |
5830 |
MMBT2907-G |
General Purpose Transistor, VCBO=-60V, VCEO=-40V, VEBO=-5V, IC=-0.6A |
Comchip Technology |
5831 |
MMBT2907A |
PNP Epitaxial Silicon Transistor, marking 2F |
Samsung Electronic |
5832 |
MMBT2907A-G |
General Purpose Transistor, VCBO=-60V, VCEO=-60V, VEBO=-5V, IC=-0.6A |
Comchip Technology |
5833 |
MMBT3904 |
NPN Epitaxial Silicon Transistor, SOT-23 case marking 1A |
Samsung Electronic |
5834 |
MMBT3904-G |
General Purpose Transistor, VCBO=60V, VCEO=40V, VEBO=6V, IC=0.2A |
Comchip Technology |
5835 |
MMBT3904-HF |
Halogen Free Transistor, VCBO=60V, VCEO=40V, VEBO=6V, IC=200mA |
Comchip Technology |
5836 |
MMBT3904W |
Small Signal Transistor, MINIBLOC |
ON Semiconductor |
5837 |
MMBT3904WT1 |
Small Signal Transistor, MINIBLOC |
ON Semiconductor |
5838 |
MMBT3904WT1G |
Small Signal Transistor, MINIBLOC |
ON Semiconductor |
5839 |
MMBT3906 |
PNP Epitaxial Silicon Transistor, SOT-23 case marking 2A |
Samsung Electronic |
5840 |
MMBT3906-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.2A |
Comchip Technology |
5841 |
MMBT3906-HF |
Halogen Free Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-200mA |
Comchip Technology |
5842 |
MMBT4401 |
NPN Epitaxial Silicon Transistor, SOT-23 case marking 2X |
Samsung Electronic |
5843 |
MMBT4401-G |
General Purpose Transistor, VCBO=60V, VCEO=40V, VEBO=6V, IC=0.6A |
Comchip Technology |
5844 |
MMBT4403 |
PNP Epitaxial Silicon Transistor, SOT-23 case marking 2T |
Samsung Electronic |
5845 |
MMBT4403-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.6A |
Comchip Technology |
5846 |
MMBT5401 |
PNP Epitaxial Silicon Transistor, SOT-23 case marking 2L |
Samsung Electronic |
5847 |
MMBT5401-G |
General Purpose Transistor, VCBO=-160V, VCEO=-150V, VEBO=-5V, IC=-0.6A |
Comchip Technology |
5848 |
MMBTA05 |
NPN Epitaxial Silicon Transistor, SOT-23 case, marking 1H |
Samsung Electronic |
5849 |
MMBTA06 |
NPN Epitaxial Silicon Transistor, case SOT-23 marking 1G |
Samsung Electronic |
5850 |
MMBTA13 |
NPN Epitaxial Silicon Transistor, marking 1M |
Samsung Electronic |
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