| No. |
Part Name |
Description |
Manufacturer |
| 5821 |
1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
| 5822 |
1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
| 5823 |
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor |
GHz Technology |
| 5824 |
1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor |
GHz Technology |
| 5825 |
16C450 |
UNIVERSAL ASYNCHRONOUS RECEIVER/TRANSMITTER (UART) |
Exar |
| 5826 |
16CTU04 |
400V 16A Ultra-Fast Common Cathode Diode in a TO-220AB package |
International Rectifier |
| 5827 |
16CTU04-1 |
400V 16A Ultra-Fast Common Cathode Diode in a TO-262 package |
International Rectifier |
| 5828 |
16CTU04S |
400V 16A Ultra-Fast Common Cathode Diode in a D2-Pak (UltraFast) package |
International Rectifier |
| 5829 |
16CTU04S |
400V 16A Ultra-Fast Common Cathode Diode in a D2-Pak (UltraFast) package |
International Rectifier |
| 5830 |
16LH |
- Vishay - Motion transducers, Integrated Cylinders |
Vishay |
| 5831 |
16PT8515 |
10/100 BASE-T TRANSFORMER |
Unknow |
| 5832 |
1718-32L |
32 W, 24 V, 1750-1850 MHz common base transistor |
GHz Technology |
| 5833 |
1719-2 |
2 W, 2 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 5834 |
1719-20 |
20 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 5835 |
1719-35 |
35 W, 28 V, 1725-1850 MHz common base transistor |
GHz Technology |
| 5836 |
1719-8 |
8 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 5837 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 5838 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 5839 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 5840 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 5841 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 5842 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 5843 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 5844 |
180T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 5845 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 5846 |
1815 |
NPN general purpose transistor |
Philips |
| 5847 |
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor |
GHz Technology |
| 5848 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 5849 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 5850 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
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