| No. |
Part Name |
Description |
Manufacturer |
| 5851 |
BDJ2GA3MEFJ-ME2 |
Automotive 300mA Variable Output LDO Regulator |
ROHM |
| 5852 |
BDW30 |
NPN silicon power transistor 30A 250W 100V |
Motorola |
| 5853 |
BDW32 |
NPN silicon power transistor 30A 250W 120V |
Motorola |
| 5854 |
BDW34 |
NPN silicon power transistor 30A 250W 140V |
Motorola |
| 5855 |
BDW36 |
NPN silicon power transistor 30A 250W 160V |
Motorola |
| 5856 |
BDX54 |
Trans Darlington PNP 30V 1A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 5857 |
BDY46 |
Trans GP BJT NPN 300V 15A |
New Jersey Semiconductor |
| 5858 |
BELASIGNA300 |
BelaSigna® 300 Audio DSP System |
ON Semiconductor |
| 5859 |
BF |
Precision Rotative Transducers, Conductive Plastic, Bushing Mounting, Size 08 to 30, Good Repeatability, Long Life, Essentially Infinite Resolution, Up to 6 Electrical Functions on the Same Shaft |
Vishay |
| 5860 |
BF245 |
Trans JFET N-CH 30V 100mA 3-Pin TO-92 |
New Jersey Semiconductor |
| 5861 |
BF245A |
Trans JFET N-CH 30V 100mA 3-Pin TO-92 |
New Jersey Semiconductor |
| 5862 |
BF245B |
Trans JFET N-CH 30V 100mA 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 5863 |
BF245C |
Trans JFET N-CH 30V 100mA 3-Pin TO-92 |
New Jersey Semiconductor |
| 5864 |
BF259 |
1.000W General Purpose NPN Metal Can Transistor. 300V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 5865 |
BF259 |
Trans GP BJT NPN 300V 0.1A 3-Pin TO-39 |
New Jersey Semiconductor |
| 5866 |
BF391 |
Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 5867 |
BF392 |
Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 5868 |
BF393 |
0.625W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 hFE. |
Continental Device India Limited |
| 5869 |
BF393 |
Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 5870 |
BF420 |
0.800W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 5871 |
BF420 |
Trans GP BJT NPN 300V 0.1A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 5872 |
BF421 |
0.800W High Voltage PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 5873 |
BF459 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 5874 |
BF459 |
Trans GP BJT NPN 300V 0.3A 3-Pin TO-126 |
New Jersey Semiconductor |
| 5875 |
BF459 |
Transistor polarity NPN Voltage Vceo 300 V Current Ic av. 0.1 A Power Ptot 6 W |
SGS Thomson Microelectronics |
| 5876 |
BF471 |
2.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF472 |
Continental Device India Limited |
| 5877 |
BF471 |
Trans GP BJT NPN 300V 0.05A 3-Pin TO-126 |
New Jersey Semiconductor |
| 5878 |
BF472 |
2.000W Medium Power PNP Plastic Leaded Transistor. 300V Vceo, 0.030A Ic, 50 hFE. Complementary BF471 |
Continental Device India Limited |
| 5879 |
BF506 |
Trans GP BJT NPN 35V 30A |
New Jersey Semiconductor |
| 5880 |
BF543 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
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