Datasheets for EFFEC

Datasheets found :: 6722

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No.	Part Name	Description	Manufacturer
5851	PTF210301E	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz	Infineon
5852	PTF210451	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz	Infineon
5853	PTF210451E	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz	Infineon
5854	PTF210901	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz	Infineon
5855	PTF210901E	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz	Infineon
5856	PTF211301	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz	Infineon
5857	PTF211301A	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz	Infineon
5858	PTF211802	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz	Infineon
5859	PTF211802A	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz	Infineon
5860	PTF211802E	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz	Infineon
5861	Q62702-F182	N-Channel junction field-Effect Transistors	Siemens
5862	Q62702-F205	N-Channel junction field-Effect Transistors	Siemens
5863	Q62702-F209	N-Channel junction field-Effect Transistors	Siemens
5864	Q62702-F219	N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS	Siemens
5865	Q62702-F236	N-Channel junction field-Effect Transistors	Siemens
5866	Q62702-F250	N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS	Siemens
5867	Q62702-F254	N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS	Siemens
5868	Q62702-F393	N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS	Siemens
5869	RFH35N08	N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS	New Jersey Semiconductor
5870	RFH35N10	N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS	New Jersey Semiconductor
5871	RFH45N05	N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS	New Jersey Semiconductor
5872	RFH45N06	N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS	New Jersey Semiconductor
5873	RFP15N06	N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS	New Jersey Semiconductor
5874	RFP15N12	N-CHANNEL LOGIC LEVEL POWER FIELD - EFFECT TRANSISTORS	New Jersey Semiconductor
5875	RFP5P12	N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS	New Jersey Semiconductor
5876	RFP5P15	N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS	New Jersey Semiconductor
5877	RHY10	Hall-effect device measuring axial magnetic field	Siemens
5878	RHY11	Hall-effect device measuring axial magnetic field	Siemens
5879	RHY15	Ferrite Hall-effect device and Hall signal generator	Siemens
5880	RHY15R	Ferrite Hall-effect device and Hall signal generator	Siemens

Datasheets found :: 6722

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