| No. |
Part Name |
Description |
Manufacturer |
| 5881 |
BU505 |
HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR |
SGS Thomson Microelectronics |
| 5882 |
BU505 |
HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR |
SGS Thomson Microelectronics |
| 5883 |
BU505 |
HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR |
ST Microelectronics |
| 5884 |
BU606 |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 5885 |
BU606 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| 5886 |
BU606D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 5887 |
BU606D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 5888 |
BU607 |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 5889 |
BU607 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| 5890 |
BU607D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 5891 |
BU607D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 5892 |
BU608 |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 5893 |
BU608 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| 5894 |
BU608D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 5895 |
BU608D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 5896 |
BU806 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 5897 |
BU806 |
Silicon NPN Planar Epitaxial Darlington Transistor |
IPRS Baneasa |
| 5898 |
BU806 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 5899 |
BU807 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 5900 |
BU807 |
Silicon NPN Planar Epitaxial Darlington Transistor |
IPRS Baneasa |
| 5901 |
BU807 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 5902 |
BU807TU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 5903 |
BUP50A |
NPN MULTI-EPITAXIAL VERY FAST SWITCHING HIGH POWER TRANSISTOR |
SemeLAB |
| 5904 |
BUP54 |
NPN MULTI-EPITAXIAL TRANSISTOR |
SemeLAB |
| 5905 |
BUP56 |
NPN MULTI-EPITAXIAL TRANSISTOR |
SemeLAB |
| 5906 |
BUR606 |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 5907 |
BUR606D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 5908 |
BUR607 |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 5909 |
BUR607D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 5910 |
BUR608 |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
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