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Datasheets for SAMSUN

Datasheets found :: 10335
Page: | 193 | 194 | 195 | 196 | 197 | 198 | 199 | 200 | 201 |
No. Part Name Description Manufacturer
5881 KM416V1004CJ-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
5882 KM416V1004CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
5883 KM416V1004CJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
5884 KM416V1004CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
5885 KM416V1004CJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
5886 KM416V1004CJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
5887 KM416V1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
5888 KM416V1004CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
5889 KM416V1004CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
5890 KM416V1004CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
5891 KM416V1004CT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
5892 KM416V1004CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
5893 KM416V1004CT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
5894 KM416V1004CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
5895 KM416V1004CT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
5896 KM416V1004CT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
5897 KM416V1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
5898 KM416V1004CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
5899 KM416V1004CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
5900 KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
5901 KM416V1200BJ-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
5902 KM416V1200BJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
5903 KM416V1200BJ-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic
5904 KM416V1200BJL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
5905 KM416V1200BJL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
5906 KM416V1200BJL-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic
5907 KM416V1200BT-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
5908 KM416V1200BT-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
5909 KM416V1200BT-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic
5910 KM416V1200BTL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic


Datasheets found :: 10335
Page: | 193 | 194 | 195 | 196 | 197 | 198 | 199 | 200 | 201 |



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