| No. |
Part Name |
Description |
Manufacturer |
| 5941 |
TPS1101PW |
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 5942 |
TPS1101PWLE |
Single P-channel Enhancement-Mode MOSFET |
Texas Instruments |
| 5943 |
TPS1101PWR |
Single P-channel Enhancement-Mode MOSFET |
Texas Instruments |
| 5944 |
TPS1101Y |
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 5945 |
TPS1101YDW |
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 5946 |
TPS1101YPW |
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 5947 |
TPS1120 |
Dual P-channel Enhancemenent-Mode MOSFET |
Texas Instruments |
| 5948 |
TPS1120D |
Dual P-channel Enhancemenent-Mode MOSFET |
Texas Instruments |
| 5949 |
TPS1120DG4 |
Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC |
Texas Instruments |
| 5950 |
TPS1120DR |
Dual P-channel Enhancemenent-Mode MOSFET |
Texas Instruments |
| 5951 |
TPS1120Y |
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 5952 |
TPS1120YD |
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 5953 |
TRA06E |
Thin Film, Resistor Array, Flow solderable, Automatic placement capability, Inner electrode protection, Wrap around termination, Low noise, High frequency applications |
Vishay |
| 5954 |
TSD4M150 |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 5955 |
TSD4M150F |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 5956 |
TSD4M150F |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 5957 |
TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 5958 |
TSD4M150V |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 5959 |
TSM2N60 |
N CHANNEL POWER ENHANCEMENT MODE MOSFET |
Taiwan Semiconductor |
| 5960 |
TSM2N60CH |
N CHANNEL POWER ENHANCEMENT MODE MOSFET |
Taiwan Semiconductor |
| 5961 |
TSM2N60CP |
N CHANNEL POWER ENHANCEMENT MODE MOSFET |
Taiwan Semiconductor |
| 5962 |
TZ400BD |
30 V, 80 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 5963 |
TZ402BD |
15 V, 80 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 5964 |
TZ403BD |
15 V, 60 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 5965 |
TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 5966 |
TZ404CY |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 5967 |
UFT5-28 |
UHF POWER MOSFET N-Channel Enhancement Mode |
Advanced Semiconductor |
| 5968 |
UFT5-28SL |
UHF POWER MOSFET N-Channel Enhancement Mode |
Advanced Semiconductor |
| 5969 |
UGF27025 |
25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
etc |
| 5970 |
UGF27025F |
25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
etc |
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