| No. |
Part Name |
Description |
Manufacturer |
| 5941 |
81200 |
Data Generator/Analyzer Platform |
Agilent (Hewlett-Packard) |
| 5942 |
81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 5943 |
81390M |
Transistor designed for IFF avionics applicatios |
SGS Thomson Microelectronics |
| 5944 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 5945 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 5946 |
81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 5947 |
81416-20 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 5948 |
81416-6 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 5949 |
81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 5950 |
81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 5951 |
81720-20 |
Transistor for communications applications |
SGS Thomson Microelectronics |
| 5952 |
817XX |
Fixed Inductors for Surface Mounting |
TOKO |
| 5953 |
81922-18 |
Transistor for communications applications |
SGS Thomson Microelectronics |
| 5954 |
81RIA100 |
V(rrm/drm): 1000V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 5955 |
82 |
Marking for NE68019 part number, 19 NEC package |
NEC |
| 5956 |
82007 |
IR Receiver Modules for Remote Control Systems |
Vishay |
| 5957 |
82022-20 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 5958 |
82023-10 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 5959 |
82023-16 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 5960 |
82092 |
IR Receiver Modules for Remote Control Systems |
Vishay |
| 5961 |
82107 |
IR Receiver Modules for Remote Control Systems |
Vishay |
| 5962 |
82159 |
IR Receiver Modules for Remote Control Systems |
Vishay |
| 5963 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 5964 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 5965 |
82223-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 5966 |
82223-4 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 5967 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 5968 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 5969 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 5970 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
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