| No. |
Part Name |
Description |
Manufacturer |
| 6001 |
BDX88 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 6002 |
BDX88 |
12A Silicon Power darlington transistor 120W |
Motorola |
| 6003 |
BDX88 |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 6004 |
BDX88 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 6005 |
BDX88A |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 6006 |
BDX88A |
12A Silicon Power darlington transistor 120W |
Motorola |
| 6007 |
BDX88A |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 6008 |
BDX88A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 6009 |
BDX88B |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 6010 |
BDX88B |
12A Silicon Power darlington transistor 120W |
Motorola |
| 6011 |
BDX88B |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 6012 |
BDX88B |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 6013 |
BDX88C |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 6014 |
BDX88C |
12A Silicon Power darlington transistor 120W |
Motorola |
| 6015 |
BDX88C |
Silicon epitaxial-base PNP power transistor in monolithic Darlington configuration |
SGS-ATES |
| 6016 |
BDX88C |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 6017 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 6018 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 6019 |
BFX66 |
Silicon darlington transistor |
SGS-ATES |
| 6020 |
BFX67 |
Silicon darlington transistor |
SGS-ATES |
| 6021 |
BGY12 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 6022 |
BGY12A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 6023 |
BGY12B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 6024 |
BGY13 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 6025 |
BGY13A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 6026 |
BGY13B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 6027 |
BGY14 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 6028 |
BGY14A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 6029 |
BGY14B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 6030 |
BPX59 |
Silicon NPN photo darlingtontransistor |
AEG-TELEFUNKEN |
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