| No. |
Part Name |
Description |
Manufacturer |
| 6001 |
S1T8825 |
1.1GHZ DUAL PLL |
Samsung Electronic |
| 6002 |
S1T8825B |
1.3GHZ DUAL PLL Data Sheet |
Samsung Electronic |
| 6003 |
S1T8825X01-R0B0 |
1.1GHZ DUAL PLL |
Samsung Electronic |
| 6004 |
S3023 |
Silicon epitaxial planar PIN diode |
TOSHIBA |
| 6005 |
S3028 |
Silicon epitaxial planar varactor diode |
TOSHIBA |
| 6006 |
S3041 |
GaAs Epitaxial planar varactor diode |
TOSHIBA |
| 6007 |
S3041A |
GaAs Epitaxial planar varactor diode |
TOSHIBA |
| 6008 |
S3046 |
Silicon epitaxial planar step recovery diode |
TOSHIBA |
| 6009 |
SAH02 |
Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode(Chopper Regulator) |
Sanken |
| 6010 |
SAH03 |
Silicon PNP Epitaxial Planar Transistor with Fast-Recovery Rectifier Diode(Voltage change switch for motor) |
Sanken |
| 6011 |
SC116 |
Si-pnp Epitaxial Planar transistor |
RFT |
| 6012 |
SC117 |
Si-pnp Epitaxial Planar transistor |
RFT |
| 6013 |
SC118 |
Si-pnp Epitaxial Planar transistor |
RFT |
| 6014 |
SC119 |
Si-pnp Epitaxial Planar transistor |
RFT |
| 6015 |
SC1968 |
NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 6016 |
SC2999 |
NPN Epitaxial Planar Silicon Transistor(HF Amp Applications) |
SANYO |
| 6017 |
SC5262 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 6018 |
SD1240 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 6019 |
SD1242 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 6020 |
SD1244-07 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 6021 |
SD1410-3 |
806-866MHz 12.5V 7W NPN silicon epitaxial planar transistor |
SGS Thomson Microelectronics |
| 6022 |
SD1413 |
836MHz 12.5V 45W NPN silicon epitaxial planar transistor |
SGS Thomson Microelectronics |
| 6023 |
SD1450 |
Silicon NPN epitaxial planer type(For low-frequency amplification) |
Panasonic |
| 6024 |
SGL34-20 |
Silicon epitaxial planer type |
Formosa MS |
| 6025 |
SGL34-30 |
Silicon epitaxial planer type |
Formosa MS |
| 6026 |
SGL34-40 |
Silicon epitaxial planer type |
Formosa MS |
| 6027 |
SGL34-50 |
Silicon epitaxial planer type |
Formosa MS |
| 6028 |
SGL34-60 |
Silicon epitaxial planer type |
Formosa MS |
| 6029 |
SGSD310 |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
| 6030 |
SGSD311 |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor |
SGS Thomson Microelectronics |
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