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Datasheets for PN

Datasheets found :: 38689
Page: | 197 | 198 | 199 | 200 | 201 | 202 | 203 | 204 | 205 |
No. Part Name Description Manufacturer
6001 2N5665 Trans GP BJT NPN 300V 5A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
6002 2N5665 Silicon NPN Power Transistors TO-66 package Savantic
6003 2N5665 Bipolar NPN Device in a Hermetically sealed TO66 Metal Package SemeLAB
6004 2N5665 Silicon NPN Power Transistor, TO-66 (cont d) package Silicon Transistor Corporation
6005 2N5666 NPN Transistor Microsemi
6006 2N5666 Trans GP BJT NPN 200V 5A 3-Pin TO-5 New Jersey Semiconductor
6007 2N5666S NPN Transistor Microsemi
6008 2N5666U3 NPN Transistor Microsemi
6009 2N5667 NPN Transistor Microsemi
6010 2N5667 Trans GP BJT NPN 300V 5A 3-Pin TO-5 New Jersey Semiconductor
6011 2N5667S NPN Transistor Microsemi
6012 2N5671 NPN Transistor Microsemi
6013 2N5671 Trans GP BJT NPN 90V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
6014 2N5671 Silicon NPN Power Transistors TO-3 package Savantic
6015 2N5671 NPN Power Transistor triple diffused - Fast Switching SESCOSEM
6016 2N5671 Silicon multiepitaxial planar NPN transistor SGS-ATES
6017 2N5671 Silicon NPN Power Transistor, TO-3 (cont d) package Silicon Transistor Corporation
6018 2N5672 NPN Transistor Microsemi
6019 2N5672 Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
6020 2N5672 Silicon NPN Power Transistors TO-3 package Savantic
6021 2N5672 NPN Power Transistor triple diffused - Fast Switching SESCOSEM
6022 2N5672 Silicon multiepitaxial planar NPN transistor SGS-ATES
6023 2N5672 Silicon NPN Power Transistor, TO-3 (cont d) package Silicon Transistor Corporation
6024 2N5672MP Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
6025 2N5672S Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
6026 2N5679 PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS Boca Semiconductor Corporation
6027 2N5680 PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS Boca Semiconductor Corporation
6028 2N5681 PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS Boca Semiconductor Corporation
6029 2N5681 10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
6030 2N5681 NPN Transistor Microsemi


Datasheets found :: 38689
Page: | 197 | 198 | 199 | 200 | 201 | 202 | 203 | 204 | 205 |



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