No. |
Part Name |
Description |
Manufacturer |
601 |
NMC27C256BQ200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
602 |
NMC27C256BQ25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
603 |
NMC27C256BQ250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
604 |
NMC27C256BQE150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
605 |
NMC27C256BQE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
606 |
NMC27C256BQM150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
607 |
NMC27C256BQM200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
608 |
NMC27C256Q17 |
170 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
609 |
NMC27C256Q20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
610 |
NMC27C256Q200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
611 |
NMC27C256Q25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
612 |
NMC27C256Q250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
613 |
NMC27C256Q300 |
300 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
614 |
NMC27C256QE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
615 |
NMC27C256QE250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
616 |
NMC27C256QM250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
617 |
NMC27C256QM350 |
350 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
618 |
NTE21256 |
262,144-Bit Dynamic Random Access Memory (DRAM) |
NTE Electronics |
619 |
PH2323-14 |
CW Power Transistor,14W 2.3 GHz |
Tyco Electronics |
620 |
PHA3135-130M |
RadarPulsedPowerModule, 115, 130,145W,100msPulse 3.1 - 3.5 GHz |
Tyco Electronics |
621 |
S6D0114 |
132-RGB X 176-DOT 1-CHIP DRIVER IC FOR 262,144-COLOR TFT-LCD DISPLAY |
Samsung Electronic |
622 |
TC514260BFT-70 |
70ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
623 |
TC514260BFT-80 |
80ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
624 |
TC514260BJ-70 |
70ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
625 |
TC514260BJ-80 |
80ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
626 |
TC554161AFT-10 |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
627 |
TC554161AFT-10L |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
628 |
TC554161AFT-10V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
629 |
TC554161AFT-70 |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
630 |
TC554161AFT-70L |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| | | |