| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2SC2758R |
NPN silicon transistor for RF AMP. and UHF TV tuner |
NEC |
| 602 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
| 603 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 604 |
2SD1265 |
Si NPN triple diffused junction. AF power amplifier. |
Panasonic |
| 605 |
2SD1265A |
Si NPN triple diffused junction. AF power amplifier. |
Panasonic |
| 606 |
2SD1304 |
Si NPN epitaxial planar. AF amplifier. |
Panasonic |
| 607 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 608 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 609 |
2SD837A |
Si NPN triple diffused planar darlington. AF power amplifier. |
Panasonic |
| 610 |
2SD856 |
Si NPN epitaxial planar. AF power amplifier. |
Panasonic |
| 611 |
2SD856A |
Si NPN epitaxial planar. AF power amplifier. |
Panasonic |
| 612 |
2SD857 |
Si NPN triple diffused planar. AF power amplifier. |
Panasonic |
| 613 |
2SD857A |
Si NPN triple diffused planar. AF power amplifier. |
Panasonic |
| 614 |
2SD892 |
Si NPN epitaxial planar darlington. AF amplifier. |
Panasonic |
| 615 |
2SD892A |
Si NPN epitaxial planar darlington. AF amplifier. |
Panasonic |
| 616 |
39504 |
Section 4. Architecture |
Microchip |
| 617 |
3SK176A |
RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
| 618 |
3SK30 |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 619 |
3SK30A |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 620 |
40-1.10EN |
Multipoint Recorder Arucomp EK-Ex. A |
Unknow |
| 621 |
AB28F200BR-B80 |
2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory. Access speed 80 ns |
Intel |
| 622 |
AB28F400BR-B80 |
4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns |
Intel |
| 623 |
AB28F400BR-T80 |
4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns |
Intel |
| 624 |
ACV11012 |
CV-relay. Automotive low profile micro-ISO relay. Standard type. 1 form C. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 625 |
ACV11112 |
CV-relay. Automotive low profile micro-ISO relay. With diode inside type. 1 form C. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 626 |
ACV11212 |
CV-relay. Automotive low profile micro-ISO relay. With resistor inside type. 1 form C. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 627 |
ACV12012 |
CV-relay. Automotive low profile micro 280 relay. Standard type. 1 form C. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 628 |
ACV12112 |
CV-relay. Automotive low profile micro 280 relay. With diode inside type type. 1 form C. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 629 |
ACV12212 |
CV-relay. Automotive low profile micro 280 relay. With resistor inside type type. 1 form C. Plug-in terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
| 630 |
ACV13012 |
CV-relay. Automotive low profile micro 280 relay. Standard type. 1 form C. PC board terminal. Coil voltage 12 V. |
Matsushita Electric Works(Nais) |
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