| No. |
Part Name |
Description |
Manufacturer |
| 601 |
5962P0053604QUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 602 |
5962P0053604QXA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 603 |
5962P0053604QXC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 604 |
5962P0053604QXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 605 |
5962P0053604TUA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 606 |
5962P0053604TUC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 607 |
5962P0053604TUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 608 |
5962P0053604TXA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 609 |
5962P0053604TXC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 610 |
5962P0053604TXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 611 |
5962P0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 612 |
5962P0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 613 |
74LS189DC |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
| 614 |
74LS189FC |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
| 615 |
74LS189PC |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
| 616 |
74S189DC |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
| 617 |
74S189FC |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
| 618 |
74S189PC |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
| 619 |
82S126A |
V(cc): +7.0V; V(in): +5.5V; ; 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc. |
Philips |
| 620 |
82S126N |
V(cc): +7.0V; V(in): +5.5V; ; 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc. |
Philips |
| 621 |
82S129A |
V(cc): +7.0V; V(in): +5.5V; ; 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc. |
Philips |
| 622 |
82S129N |
V(cc): +7.0V; V(in): +5.5V; ; 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc. |
Philips |
| 623 |
82S130A |
V(cc): +7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion |
Philips |
| 624 |
82S130N |
V(cc): +7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion |
Philips |
| 625 |
82S131A |
V(cc): +7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion |
Philips |
| 626 |
82S131N |
V(cc): +7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion |
Philips |
| 627 |
8418002XA |
5.0V Reference Diode 3-TO -55 to 125 |
Texas Instruments |
| 628 |
93C06 |
256 Bit/1K 5.0V CMOS Serial EEPROM |
Microchip |
| 629 |
93C06-EJ |
256 Bit/1K 5.0V CMOS Serial EEPROM |
Microchip |
| 630 |
93C06-EP |
256 Bit/1K 5.0V CMOS Serial EEPROM |
Microchip |
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