| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2SC4081UBHZGTL |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 602 |
2SC4617EBHZG |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 603 |
2SC4617EBHZGTL |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 604 |
2SC5226A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP |
ON Semiconductor |
| 605 |
2SC5227A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single CP |
ON Semiconductor |
| 606 |
2SC5245A |
RF Transistor, 10V, 30mA, fT=8GHz, NPN Single MCP |
ON Semiconductor |
| 607 |
2SC5488A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single SSFP |
ON Semiconductor |
| 608 |
2SC5551A |
RF Transistor, 30V, 300mA, fT=3.5GHz, NPN Single PCP |
ON Semiconductor |
| 609 |
2SC5658-HF |
Halogen Free Transistor, VCBO=60V, VCEO=50V, VEBO=7V, IC=150mA |
Comchip Technology |
| 610 |
2SC5658-HF |
Halogen Free Transistor, VCBO=60V, VCEO=50V, VEBO=7V, IC=150mA |
Comchip Technology |
| 611 |
2SC5875 |
Power transistor (30V, 2A) |
ROHM |
| 612 |
2SC6043 |
Bipolar Transistor, 50V, 2A, Low VCE(sat) NPN Single MP |
ON Semiconductor |
| 613 |
2SC6097 |
Bipolar Transistor, 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA |
ON Semiconductor |
| 614 |
2SD1200F |
MEDIUM POWER TRANSISTOR(-80V, -0.7A) |
Unknow |
| 615 |
2SD1805 |
Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single TP/TP-FA |
ON Semiconductor |
| 616 |
2SD2025 |
POWER TRANSISTOR (-100V, -8A) |
ROHM |
| 617 |
2SD2703 |
General purpose amplification (30V, 1A) |
ROHM |
| 618 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 619 |
2SD600 |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 620 |
2SD600K |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 621 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 622 |
2SD917 |
Silicon NPN triple diffused planar transistor, 330V, 7A |
Panasonic |
| 623 |
2SJ355-T1 |
P-channel MOS FET (-30V, +-2A) |
NEC |
| 624 |
2SJ355-T2 |
P-channel MOS FET (-30V, +-2A) |
NEC |
| 625 |
2SJ357-T1 |
P-channel MOS FET(-30V, +-3A) |
NEC |
| 626 |
2SJ357-T2 |
P-channel MOS FET(-30V, +-3A) |
NEC |
| 627 |
2SJ358-T1 |
P-channel MOS FET (-60V, +-3A) |
NEC |
| 628 |
2SJ358-T2 |
P-channel MOS FET (-60V, +-3A) |
NEC |
| 629 |
2SJ553STR |
P-channel MOSFET for high speed power switching, 60V, 30A |
Renesas |
| 630 |
2SJ652 |
P-Channel Power MOSFET, -60V, -28A, 38mOhm, TO-220F-3SG |
ON Semiconductor |
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