| No. |
Part Name |
Description |
Manufacturer |
| 601 |
R5100610XXWA |
600V, 100A general purpose single diode |
Powerex Power Semiconductors |
| 602 |
R5100810XXWA |
800V, 100A general purpose single diode |
Powerex Power Semiconductors |
| 603 |
R5101010XXWA |
1000V, 100A general purpose single diode |
Powerex Power Semiconductors |
| 604 |
R5110210XXWA |
200V, 100A general purpose single diode |
Powerex Power Semiconductors |
| 605 |
R5110410XXWA |
400V, 100A general purpose single diode |
Powerex Power Semiconductors |
| 606 |
R5110610XXWA |
600V, 100A general purpose single diode |
Powerex Power Semiconductors |
| 607 |
R5110810XXWA |
800V, 100A general purpose single diode |
Powerex Power Semiconductors |
| 608 |
R5111010XXWA |
1000V, 100A general purpose single diode |
Powerex Power Semiconductors |
| 609 |
SD1100C25C |
2500V 1100A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
| 610 |
SD1100C30C |
3000V 1100A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
| 611 |
SD1100C32C |
3200V 1100A Std. Recovery Diode in a B-43 (E-Puk)package |
International Rectifier |
| 612 |
SD2000C04L |
400V 2100A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
| 613 |
SD2000C08L |
800V 2100A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
| 614 |
SD2000C10L |
1000V 2100A Std. Recovery Diode in a DO-200AB (B-Puk)package |
International Rectifier |
| 615 |
SH80D11 |
Silicon alloy-diffused junction high speed thyristor 100A 200V |
TOSHIBA |
| 616 |
SH80F11 |
Silicon alloy-diffused junction high speed thyristor 100A 300V |
TOSHIBA |
| 617 |
SH80G11 |
Silicon alloy-diffused junction high speed thyristor 100A 400V |
TOSHIBA |
| 618 |
SH80H11 |
Silicon alloy-diffused junction high speed thyristor 100A 500V |
TOSHIBA |
| 619 |
SH80J11 |
Silicon alloy-diffused junction high speed thyristor 100A 600V |
TOSHIBA |
| 620 |
SH80L11 |
Silicon alloy-diffused junction high speed thyristor 100A 800V |
TOSHIBA |
| 621 |
SMBJ100A (DC) |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 622 |
STB100NF03L-03 |
N-CHANNEL 30V - 0.0026 OHM - 100A D2PAK STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
| 623 |
STB100NF03L-03 |
N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 624 |
STB100NF03L-03-01 |
N-CHANNEL 30V - 0.0026 W -100A D��PAK/I��PAK/TO-220 STripFET�� II POWER MOSFET |
ST Microelectronics |
| 625 |
STB100NF03L-03-1 |
N-CHANNEL 30V - 0.0026 OHM - 100A I2PAK STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
| 626 |
STB100NF03L-03-1 |
N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 627 |
STB100NF03L-03T4 |
N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET |
ST Microelectronics |
| 628 |
STB100NF04L |
N-CHANNEL 40V 0.0036 OHM 100A D2PAK STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
| 629 |
STB100NF04L |
N-CHANNEL 40V 0.0036 OHM 100A D2PAK STRIPFET II POWER MOSFET |
ST Microelectronics |
| 630 |
STB100NF04L-1 |
N-CHANNEL 40V 0.0036 OHM 100A D2PAK/I2PAK STRIPFET II POWER MOSFET |
ST Microelectronics |
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