No. |
Part Name |
Description |
Manufacturer |
601 |
DM87SR181J |
20 ns, (1024 x 8) 8K-bit registered TTL PROM |
National Semiconductor |
602 |
DM87SR181N |
20 ns, (1024 x 8) 8K-bit registered TTL PROM |
National Semiconductor |
603 |
DM87SR181V |
20 ns, (1024 x 8) 8K-bit registered TTL PROM |
National Semiconductor |
604 |
DT28F320S5-120 |
Word-wide FlashFile memory. 32 Mbit, access speed 120 ns |
Intel |
605 |
E28F001BN-B120 |
1-Mbit(128K x 8) boot block flash memory. Access speed 120 ns |
Intel |
606 |
E28F001BN-T120 |
1-Mbit(128K x 8) boot block flash memory. Access speed 120 ns |
Intel |
607 |
E28F001BN-T150 |
1-Mbit(128K x 8) boot block flash memory. Access speed 120 ns |
Intel |
608 |
ES2A |
Surface Mount Ultrafast Plastic Rectifiers, Forward Current 2.0 A, Reverse Recovery Time 20 ns |
Vishay |
609 |
ES2B |
Surface Mount Ultrafast Plastic Rectifiers, Forward Current 2.0 A, Reverse Recovery Time 20 ns |
Vishay |
610 |
ES2C |
Surface Mount Ultrafast Plastic Rectifiers, Forward Current 2.0 A, Reverse Recovery Time 20 ns |
Vishay |
611 |
ES2D |
Surface Mount Ultrafast Plastic Rectifiers, Forward Current 2.0 A, Reverse Recovery Time 20 ns |
Vishay |
612 |
KM75C104AHJ-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
613 |
KM75C104AHJI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
614 |
KM75C104AHN-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
615 |
KM75C104AHNI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
616 |
KM75C104AHP-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
617 |
KM75C104AJ-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
618 |
KM75C104AJI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
619 |
KM75C104ALJ-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
620 |
KM75C104ALJI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
621 |
KM75C104ALNI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
622 |
KM75C104ALP-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
623 |
KM75C104AN-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
624 |
KM75C104ANI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
625 |
KM75C104AP-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
626 |
KM75C104API-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
627 |
MA44663A |
60 V, 20 ns, snap varactor step recovery diode |
MA-Com |
628 |
MA44663B |
60 V, 20 ns, snap varactor step recovery diode |
MA-Com |
629 |
MA44663C |
60 V, 20 ns, snap varactor step recovery diode |
MA-Com |
630 |
MA44663D |
60 V, 20 ns, snap varactor step recovery diode |
MA-Com |
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