| No. |
Part Name |
Description |
Manufacturer |
| 601 |
1N5269BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 87 V. Tolerance +-5%. |
Microsemi |
| 602 |
1N5269BUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 603 |
1N5269C |
87 V, 1.4 mA, zener diode |
Leshan Radio Company |
| 604 |
1N5269C |
Diode Zener Single 87V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 605 |
1N5269C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 606 |
1N5269C-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 607 |
1N5269CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 608 |
1N5269CUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 609 |
1N5269D |
87 V, 1.4 mA, zener diode |
Leshan Radio Company |
| 610 |
1N5269D |
Diode Zener Single 87V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 611 |
1N5269D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 612 |
1N5269D-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 613 |
1N5269DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 614 |
1N5269DUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 615 |
1N5269UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 87 V. |
Microsemi |
| 616 |
1N5526 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 617 |
1N5526 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 618 |
1N5526 |
Low Voltage Avalanche Zener |
Microsemi |
| 619 |
1N5526 |
Diode Zener Single 6.8V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 620 |
1N5526A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 621 |
1N5526A |
Low Voltage Avalanche Zener |
Microsemi |
| 622 |
1N5526A |
Diode Zener Single 6.8V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 623 |
1N5526A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 624 |
1N5526A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 625 |
1N5526AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 626 |
1N5526AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 627 |
1N5526B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 628 |
1N5526B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 629 |
1N5526B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 630 |
1N5526B |
Low Voltage Avalanche Zener |
Microsemi |
| | | |
