| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 602 |
2SB1109 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 603 |
2SB1110 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 604 |
2SB1244 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
| 605 |
2SB1245 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
Hitachi Semiconductor |
| 606 |
2SB1295 |
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 607 |
2SB1683 |
General-Purpose Amplifier Transistors |
SANYO |
| 608 |
2SB439 |
Germanium PNP alloy junction transistor, low noise amplifier applications |
TOSHIBA |
| 609 |
2SB440 |
Germanium PNP alloy junction transistor, low noise amplifier applications |
TOSHIBA |
| 610 |
2SB633P |
General-Purpose Amplifier Transistors |
SANYO |
| 611 |
2SB646 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
Hitachi Semiconductor |
| 612 |
2SB646A |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A |
Hitachi Semiconductor |
| 613 |
2SB717 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
Hitachi Semiconductor |
| 614 |
2SB718 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
Hitachi Semiconductor |
| 615 |
2SB73 |
Germanium Transistor PNP Alloyed Junction Audio Frequency Low Noise Amplifier |
Hitachi Semiconductor |
| 616 |
2SB814 |
Si PNP epitaxial planar high voltage, low-noise amplifier |
Panasonic |
| 617 |
2SB817P |
General-Purpose Amplifier Transistors |
SANYO |
| 618 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 619 |
2SC1166 |
Silicon NPN epitaxial planar transistor, driver stage amplifier applications, complementary to 2SA661 |
TOSHIBA |
| 620 |
2SC1199 |
Silicon NPN epitaxial planar transistor, RF Wide-Band low-noise amplifier |
TOSHIBA |
| 621 |
2SC1222 |
NPN silicon transistor designed for use in AF low noise amplifier |
NEC |
| 622 |
2SC1222 |
Transistors LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 623 |
2SC1335 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
Unknow |
| 624 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 625 |
2SC1514 |
HIGH FREQUENCY HIGH VOLTAGE AMPLIFIER TV VIDEO OUTPUT |
Hitachi Semiconductor |
| 626 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 627 |
2SC1627 |
Transistor Silicon NPN Epitaxial Type (PCT process) Driver Stage Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
| 628 |
2SC1627 |
Transistor Silicon NPN Epitaxial Type (PCT process) Driver Stage Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
| 629 |
2SC1627A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 630 |
2SC1627A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| | | |
