No. |
Part Name |
Description |
Manufacturer |
601 |
AFM04P3-213 |
Low Noise/Medium Power GaAs MESFET Chips |
Alpha Industries Inc |
602 |
AM82731-001 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
603 |
AM83135-003 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
604 |
AN1541 |
A MEDIUM POWER AMPLIFIER AT 1.8GHZ USING THE NPN SI START499 TRANSISTOR |
SGS Thomson Microelectronics |
605 |
AT-31625 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
606 |
AT-31625-BLK |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
607 |
AT-31625-TR1 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
608 |
AT-42000 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
609 |
AT-42000-GP4 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
610 |
AT-42010 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
611 |
AT-42035 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
612 |
AT-42070 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
613 |
AT-42085 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
614 |
AT-42086 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
615 |
AT-42086-BLK |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
616 |
AT-42086-TR1 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
617 |
ATF-44101 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
618 |
ATF-45101 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
619 |
ATF-45171 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
620 |
ATF-46101 |
2-10 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
621 |
ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
622 |
B15V140 |
Medium power silicon microwave transistor |
BOPOLARICS |
623 |
B15V180 |
Medium power silicon microwave transistor |
BOPOLARICS |
624 |
B20V140 |
Medium power silicon microwave transistor |
BOPOLARICS |
625 |
B20V140B |
Medium power silicon microwave transistor |
BOPOLARICS |
626 |
B772 |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
Unisonic Technologies |
627 |
BAT165A |
40 V, 0.75 A medium power Schottky barrier rectifier |
Nexperia |
628 |
BAT760 |
Medium power Schottky barrier single diode |
Nexperia |
629 |
BAT760 |
Medium power Schottky barrier single diode |
NXP Semiconductors |
630 |
BC119 |
Transistor, medium power audio amplifiers |
SGS-ATES |
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