| No. |
Part Name |
Description |
Manufacturer |
| 601 |
PKF4628PI |
6W; V(cc): -0.5 to +7V; 3-7W 48V input DC/DC power module |
Ericsson Microelectronics |
| 602 |
PKF4628SI |
6W; V(cc): -0.5 to +7V; 3-7W 48V input DC/DC power module |
Ericsson Microelectronics |
| 603 |
PKF4629PI |
7W; V(cc): -0.5 to +7V; 3-7W 48V input DC/DC power module |
Ericsson Microelectronics |
| 604 |
PKF4629SI |
7W; V(cc): -0.5 to +7V; 3-7W 48V input DC/DC power module |
Ericsson Microelectronics |
| 605 |
S3F460H |
|
Samsung Electronic |
| 606 |
S3F460H |
|
Samsung Electronic |
| 607 |
SF369 |
Si-npn RF transistor, possibly equivalent BF469 |
RFT |
| 608 |
SF46 |
POWER RECTIFIERS(4.0A,50-400V) |
MOSPEC Semiconductor |
| 609 |
SF46G |
SUPER FAST RECOVERY RECTIFIERS |
Micro Commercial Components |
| 610 |
SF46G |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 611 |
SGSF461 |
125W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS |
SGS Thomson Microelectronics |
| 612 |
SGSIF461 |
65W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS |
SGS Thomson Microelectronics |
| 613 |
TH50VSF4682AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
TOSHIBA |
| 614 |
TH50VSF4683AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE |
TOSHIBA |
| 615 |
TLHF4600 |
High Intensity LED in ∅ 3 mm Tinted Diffused Package |
Vishay |
| 616 |
TR2009SF46 |
4600 V, rectifier diode |
TRANSYS Electronics Limited |
| 617 |
TR2009SF46 |
RECTIFIER DIODE |
TRSYS |
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