| No. |
Part Name |
Description |
Manufacturer |
| 601 |
TA7852 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 602 |
TA7982 |
5W, 400MHz Silicon NPN Overlay Transistor for VHF/UHF High-Power Amplifiers, Warning - device contains beryllium oxide |
RCA Solid State |
| 603 |
TIL113 |
Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Darlinrton-Connected Phototransistor |
Texas Instruments |
| 604 |
TIL119 |
Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Darlinrton-Connected Phototransistor |
Texas Instruments |
| 605 |
TIL119A |
Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Darlinrton-Connected Phototransistor |
Texas Instruments |
| 606 |
TIL191 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 607 |
TIL191A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 608 |
TIL191B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 609 |
TIL192 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 610 |
TIL192A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 611 |
TIL192B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 612 |
TIL193 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 613 |
TIL193A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 614 |
TIL193B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 615 |
TIL318 |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 616 |
TIL31B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 617 |
TIL33B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 618 |
TIL34B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 619 |
TLIU04C1 |
TLIU04C1 Quad T1/E1 Line Interface |
Agere Systems |
| 620 |
TLIU04C1 |
TLIU04C1 Quad T1/E1 Line Interface |
Agere Systems |
| 621 |
TOX9000 |
1 V, gallium aluminum arsenide light emitting diode |
Texas Instruments |
| 622 |
TOX9002 |
1 V, gallium aluminum arsenide light emitting diode |
Texas Instruments |
| 623 |
TOX9004 |
3 V, gallium aluminum arsenide infrared-emitting diode |
Texas Instruments |
| 624 |
TOX9005 |
2 V, P-N gallium arsenide infrared-emitting diode |
Texas Instruments |
| 625 |
TOX9006 |
3 V, gallium aluminum arsenide infrared-emitting diode |
Texas Instruments |
| 626 |
TOX9007 |
2 V, P-N gallium arsenide infrared-emitting diode |
Texas Instruments |
| 627 |
UPG100B |
Gallium arsenide integrated circuit |
NEC |
| 628 |
UPG101B |
Gallium arsenide integrated circuit |
NEC |
| 629 |
UPG103A |
Gallium arsenide integrated circuit |
NEC |
| 630 |
UPG103A(1) |
Gallium arsenide integrated circuit |
NEC |
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