No. |
Part Name |
Description |
Manufacturer |
601 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
602 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
603 |
BF999 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
604 |
BSP280 |
IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current) |
Siemens |
605 |
ECH8604 |
N CHANNEL MOS SILICON TRANSISTOR |
SANYO |
606 |
ECH8607 |
N CHANNEL MOS SILICON TRANSISTOR |
SANYO |
607 |
FQBI9N50 |
500v N CHANNEL MOSFET |
Fairchild Semiconductor |
608 |
FTD2011A |
N CHANNEL MOS SILICON TRANSISTOR |
SANYO |
609 |
FW257 |
N CHANNEL MOS SILICON TRANSISTOR |
SANYO |
610 |
FW261 |
N CHANNEL MOS SILICON TRANSISTOR |
SANYO |
611 |
GT40M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
612 |
GT40T101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
613 |
GT60M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
614 |
H5N2509P |
SILICON N CHANNEL MOSFET SWITCHING |
Hitachi Semiconductor |
615 |
H5N3003 |
Silicon N Channel MOS FET High Speed Power Switching |
Renesas |
616 |
H7N0307L |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
617 |
HAF2007 |
Silicon N Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
618 |
HAF2007L |
Silicon N Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
619 |
HAF2007S |
Silicon N Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
620 |
HAF2011 |
Silicon N Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
621 |
HAF2011L |
Silicon N Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
622 |
HAF2011S |
Silicon N Channel MOS FET Series Power Switching |
Hitachi Semiconductor |
623 |
HN1K02FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
624 |
HN1K03FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
625 |
HN1K04FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
626 |
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications |
TOSHIBA |
627 |
HN1K06FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
628 |
HN4K03JU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
629 |
HSK1118 |
Silicon N Channel MOS Type |
Hi-Sincerity Microelectronics |
630 |
IRF450 |
N Channel MOSFET |
Microsemi |
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