| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2SD856A |
Si NPN epitaxial planar. AF power amplifier. |
Panasonic |
| 602 |
2SD857 |
Si NPN triple diffused planar. AF power amplifier. |
Panasonic |
| 603 |
2SD857A |
Si NPN triple diffused planar. AF power amplifier. |
Panasonic |
| 604 |
2SD876 |
Si NPN triple diffused planar. High hFE, AF power amplifier. |
Panasonic |
| 605 |
2SD878 |
HIGH POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 606 |
2SD880 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 607 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 608 |
2SD886 |
Si NPN triple diffused planar. High hFE, AF power amplifier. |
Panasonic |
| 609 |
2SD886A |
Si NPN triple diffused planar. High hFE, AF power amplifier. |
Panasonic |
| 610 |
2SD888 |
High hff,AF Power Amplifier |
Unknow |
| 611 |
2SJ200 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 612 |
2SJ201 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 613 |
2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
| 614 |
2SJ338 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
| 615 |
2SJ440 |
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE - AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 616 |
2SJ440-Y |
P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) |
TOSHIBA |
| 617 |
2SJ48 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 618 |
2SJ49 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 619 |
2SJ50 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 620 |
2SJ55 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK175 |
Hitachi Semiconductor |
| 621 |
2SJ56 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK176 |
Hitachi Semiconductor |
| 622 |
2SK133 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 623 |
2SK134 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 624 |
2SK135 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 625 |
2SK1529 |
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 626 |
2SK1530 |
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 627 |
2SK2013 |
Field Effect Transistor Silicon N Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
| 628 |
2SK2162 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 629 |
2SK2467 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 630 |
2SK2467-Y |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
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