| No. |
Part Name |
Description |
Manufacturer |
| 601 |
AN7191Z |
Dual 20W BTL Low Frequency Power Amplifier IC for Output |
Panasonic |
| 602 |
AT-31625 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 603 |
AT-31625-BLK |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 604 |
AT-31625-TR1 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 605 |
AT-33225 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 606 |
AT-33225-BLK |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 607 |
AT-33225-TR1 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 608 |
AT-36408 |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 609 |
AT-36408-BLK |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 610 |
AT-36408-TR1 |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 611 |
AWT6251 |
The AWT6251 meets the increasing demands for higher output power in 3GPP Wireless handsets. |
Anadigics Inc |
| 612 |
AWT6251 |
The AWT6251 meets the increasing demands for higher output power in 3GPP Wireless handsets. |
Anadigics Inc |
| 613 |
AWT6252 |
The AWT6252 meets the increasing demands for higher output power in 3GPP 1XRTT handsets. |
Anadigics Inc |
| 614 |
BC328 |
Transistor. Switch. and amp. applications. Suitable for AF-driver and power output stages. Vces = -30V, Vceo = -25V, Vebo = -5V. Collector dissipation Pc(max) = 625mW. Ic = -800mA. |
USHA India LTD |
| 615 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
| 616 |
BC338 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Vces = 30V, Vceo= 25V, Vebo = 5V, Pc = 625mW, Ic = 800mA. |
USHA India LTD |
| 617 |
BFT96 |
Epitaxial planar PNP transistor intended for use as driver or output stage in MATV application up to 800MHz |
SGS-ATES |
| 618 |
C1010 |
Photo Coupler, Transistor output |
Cosmo Electronics |
| 619 |
CA2810 |
Wide Bandwidth Linear Hybrid Amplifier 10-350MHz, 33dB Gain, Power Output 800mW |
TRW |
| 620 |
CA2812 |
Wide Bandwidth Linear Hybrid Amplifier, 1-520MHz 30db Gain, Power Output 250mW Minimum, optimized for 12V Operation |
TRW |
| 621 |
CA2818 |
Wide Bandwidth Linear Hybrid Amplifier 1-200MHz, 18.5db Gain, 800mW power output |
TRW |
| 622 |
CA2820 |
Wide Bandwidth Linear Hybrid Amplifier 1-520MHz, 30dB Gain, 400mW power output minimum |
TRW |
| 623 |
CA3140 |
4.5MHz, BiMOS operational amplifier with MOSFET input/bipolar output |
Harris Semiconductor |
| 624 |
CA3140 |
Op Amp, BiMOS, MOSFET Inputs, Bipolar Outputs, 4.5MHz |
Intersil |
| 625 |
CA3140A |
4.5MHz, BiMOS operational amplifier with MOSFET input/bipolar output |
Harris Semiconductor |
| 626 |
CA3140A |
Op Amp, BiMOS, MOSFET Inputs, Bipolar Outputs, 4.5MHz, Improved Input Characteristics |
Intersil |
| 627 |
CA3140AE |
4.5MHz, BiMOS operational amplifier with MOSFET input/bipolar output |
Harris Semiconductor |
| 628 |
CA3140AE |
4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output |
Intersil |
| 629 |
CA3140AM |
4.5MHz, BiMOS operational amplifier with MOSFET input/bipolar output |
Harris Semiconductor |
| 630 |
CA3140AM |
4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output |
Intersil |
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