| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2N4910 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 602 |
2N4910X |
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE |
SemeLAB |
| 603 |
2N4911 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 604 |
2N4911X |
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE |
SemeLAB |
| 605 |
2N4912 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 606 |
2N4912X |
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE |
SemeLAB |
| 607 |
2N4918 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 608 |
2N4919 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 609 |
2N4920 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 610 |
2N4921 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 611 |
2N4922 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 612 |
2N4923 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 613 |
2N4924 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 614 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 615 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 616 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 617 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 618 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 619 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 620 |
2N5016 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 621 |
2N5038 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 622 |
2N5039 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 623 |
2N5067 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 624 |
2N5068 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 625 |
2N5069 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 626 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 627 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 628 |
2N5087-D |
Amplifier Transistor PNP Silicon |
ON Semiconductor |
| 629 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 630 |
2N5088RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| | | |
