No. |
Part Name |
Description |
Manufacturer |
601 |
SP706SEU-L |
+3.0V/+3.3V Low Power Microprocessor Supervisory Circuits |
Sipex Corporation |
602 |
SP706SEU-L/TR |
+3.0V/+3.3V Low Power Microprocessor Supervisory Circuits |
Sipex Corporation |
603 |
SP706SEU/TR |
+3.0V/+3.3V Low Power Microprocessor Supervisory Circuits |
Sipex Corporation |
604 |
SP708SEU |
+3.0V/+3.3V Low Power Microprocessor Supervisory Circuits |
Sipex Corporation |
605 |
SP708SEU-L |
+3.0V/+3.3V Low Power Microprocessor Supervisory Circuits |
Sipex Corporation |
606 |
SP708SEU-L/TR |
+3.0V/+3.3V Low Power Microprocessor Supervisory Circuits |
Sipex Corporation |
607 |
SP708SEU/TR |
+3.0V/+3.3V Low Power Microprocessor Supervisory Circuits |
Sipex Corporation |
608 |
TC51832 |
Silicon Gate CMOS / 32768 word x 8 Bit CMOS Pseudo Static RAM |
TOSHIBA |
609 |
TC51832F-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
610 |
TC51832F-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
611 |
TC51832F-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
612 |
TC51832FL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
613 |
TC51832FL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
614 |
TC51832FL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
615 |
TC51832P-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
616 |
TC51832P-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
617 |
TC51832P-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
618 |
TC51832PL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
619 |
TC51832PL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
620 |
TC51832PL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
621 |
TC51832SP-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
622 |
TC51832SP-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
623 |
TC51832SP-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
624 |
TC51832SPL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
625 |
TC51832SPL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
626 |
TC51832SPL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
627 |
TC51WHM516AXBN |
SRAM - Pseudo SRAM |
TOSHIBA |
628 |
TC51WHM516AXBN65 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
629 |
TC51WHM516AXBN70 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
630 |
TC51WHM516AXGN65 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
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