No. |
Part Name |
Description |
Manufacturer |
6031 |
2N6404 |
16A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
6032 |
2N6404 |
Thyristor, 16 amperes, 600 volt |
Teccor Electronics |
6033 |
2N6420 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
6034 |
2N6421 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
6035 |
2N6422 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
6036 |
2N6423 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
6037 |
2N6427 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
Samsung Electronic |
6038 |
2N6428 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
6039 |
2N6428A |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
6040 |
2N6439 |
POWER TRANSISTOR |
Tyco Electronics |
6041 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
6042 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
6043 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
6044 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
6045 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
6046 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
6047 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
6048 |
2N6477 |
MEDIUM POWER SILICON NPN TRANSISTORS |
General Electric Solid State |
6049 |
2N6478 |
MEDIUM POWER SILICON NPN TRANSISTORS |
General Electric Solid State |
6050 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
6051 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
6052 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
6053 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
6054 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
6055 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
6056 |
2N6496 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
6057 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
6058 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
6059 |
2N6504 |
Thyristor, 25 amperes, 50 volt |
Teccor Electronics |
6060 |
2N6505 |
Thyristor, 25 amperes, 100 volt |
Teccor Electronics |
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