| No. |
Part Name |
Description |
Manufacturer |
| 6031 |
APT75DQ60SG |
High Voltage Fast Recovery Diode |
Microsemi |
| 6032 |
APT8DQ60KG |
High Voltage Fast Recovery Diode |
Microsemi |
| 6033 |
APTC60HM70RT3G |
Full Bridge + Fast Rectifier Bridge |
Microsemi |
| 6034 |
APTCV60HM45RCT3G |
Full Bridge + Fast Rectifier Bridge |
Microsemi |
| 6035 |
APTCV60HM45RT3G |
Full Bridge + Fast Rectifier Bridge |
Microsemi |
| 6036 |
APTCV60HM70RT3G |
Full Bridge + Fast Rectifier Bridge |
Microsemi |
| 6037 |
APTGT50H60RT3G |
Full Bridge + Fast Rectifier Bridge |
Microsemi |
| 6038 |
AQY410EH |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 6039 |
AQY410EHA |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 6040 |
AQY410EHAX |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 6041 |
AQY410EHAZ |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 6042 |
AQY414EH |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 6043 |
AQY414EHA |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 6044 |
AQY414EHAX |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 6045 |
AQY414EHAZ |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 6046 |
AR25 |
25.0 AMPS. High Current Plastic Silicon Rectifiers |
Taiwan Semiconductor |
| 6047 |
ARE1303 |
RE-relay. 2.6 GHz 75 ohm relays for broadcasting industry. Standard PC board terminal. Nominal voltage 3 V DC. |
Matsushita Electric Works(Nais) |
| 6048 |
ARE1306 |
RE-relay. 2.6 GHz 75 ohm relays for broadcasting industry. Standard PC board terminal. Nominal voltage 6 V DC. |
Matsushita Electric Works(Nais) |
| 6049 |
ARE1309 |
RE-relay. 2.6 GHz 75 ohm relays for broadcasting industry. Standard PC board terminal. Nominal voltage 9 V DC. |
Matsushita Electric Works(Nais) |
| 6050 |
ARE1312 |
RE-relay. 2.6 GHz 75 ohm relays for broadcasting industry. Standard PC board terminal. Nominal voltage 12 V DC. |
Matsushita Electric Works(Nais) |
| 6051 |
ARE1324 |
RE-relay. 2.6 GHz 75 ohm relays for broadcasting industry. Standard PC board terminal. Nominal voltage 24 V DC. |
Matsushita Electric Works(Nais) |
| 6052 |
ARE134H |
RE-relay. 2.6 GHz 75 ohm relays for broadcasting industry. Standard PC board terminal. Nominal voltage 4.5 V DC. |
Matsushita Electric Works(Nais) |
| 6053 |
ARF2012 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 6054 |
ARF2012S26 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 6055 |
ARF220 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 6056 |
ARF220S14 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 6057 |
ARF221 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 6058 |
ARF221S14 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 6059 |
ARF240 |
FAST RECOVERY DIODE |
POSEICO SPA |
| 6060 |
ARF240S25 |
FAST RECOVERY DIODE |
POSEICO SPA |
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