No. |
Part Name |
Description |
Manufacturer |
6061 |
1S6120A |
Silicon power zener diode 120V, ±5% tolerance |
Texas Instruments |
6062 |
1S6120R |
Silicon power zener diode 120V, reverse polarity |
Texas Instruments |
6063 |
1S6130 |
Silicon power zener diode 130V |
Texas Instruments |
6064 |
1S6130A |
Silicon power zener diode 130V, ±5% tolerance |
Texas Instruments |
6065 |
1S6130R |
Silicon power zener diode 130V, reverse polarity |
Texas Instruments |
6066 |
1S6150 |
Silicon power zener diode 150V |
Texas Instruments |
6067 |
1S6150A |
Silicon power zener diode 150V, ±5% tolerance |
Texas Instruments |
6068 |
1S6150R |
Silicon power zener diode 150V, reverse polarity |
Texas Instruments |
6069 |
1S6160 |
Silicon power zener diode 160V |
Texas Instruments |
6070 |
1S6160A |
Silicon power zener diode 160V, ±5% tolerance |
Texas Instruments |
6071 |
1S6160R |
Silicon power zener diode 160V, reverse polarity |
Texas Instruments |
6072 |
1S6180 |
Silicon power zener diode 180V |
Texas Instruments |
6073 |
1S6180A |
Silicon power zener diode 180V, ±5% tolerance |
Texas Instruments |
6074 |
1S6180R |
Silicon power zener diode 180V, reverse polarity |
Texas Instruments |
6075 |
1S6200 |
Silicon power zener diode 200V |
Texas Instruments |
6076 |
1S6200A |
Silicon power zener diode 200V, ±5% tolerance |
Texas Instruments |
6077 |
1S6200R |
Silicon power zener diode 200V, reverse polarity |
Texas Instruments |
6078 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6079 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6080 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6081 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6082 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6083 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6084 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6085 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6086 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6087 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6088 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6089 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6090 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
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