| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ASM3X2105AFSR |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 62 |
ASM3X2105AFT |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 63 |
ASM3X2105AFTR |
5 V, 6 MHz to 10 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 64 |
SB660F |
Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 75degC 6 A. |
Panjit International Inc |
| 65 |
SD217CHP |
25 V, 6 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 66 |
SD217DE |
25 V, 6 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 67 |
SD217R |
25 V, 6 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 68 |
SD219CHP |
25 V, 6 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 69 |
SD219DE |
25 V, 6 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 70 |
SD219R |
25 V, 6 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| | | |
