No. |
Part Name |
Description |
Manufacturer |
61 |
1SMB3EZ30 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
62 |
1SMB3EZ33 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
63 |
1SMB3EZ36 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
64 |
1SMB3EZ39 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
65 |
1SMB3EZ43 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
66 |
1SMB3EZ47 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
67 |
1SMB3EZ51 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
68 |
1SMB3EZ56 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
69 |
1SMB3EZ62 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
70 |
1SMB3EZ68 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
71 |
1SMB3EZ75 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
72 |
1SMB3EZ82 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
73 |
1SMB3EZ91 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
74 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
75 |
2N3702 |
0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE |
Continental Device India Limited |
76 |
2N3704 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE |
Continental Device India Limited |
77 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
78 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
79 |
2N5070 |
NPN silicon RF power transistor 25W (PEP) - 30MHz |
Motorola |
80 |
3296 |
3296 - 3/8 �� Square Trimming Potentiometer - Bourns |
BOURNS |
81 |
3296P-1-100ALF |
3296 - 3/8 �� Square Trimming Potentiometer - Bourns |
BOURNS |
82 |
3296P-1-100LF |
3296 - 3/8 �� Square Trimming Potentiometer - Bourns |
BOURNS |
83 |
3296P-1-100RLF |
3296 - 3/8 �� Square Trimming Potentiometer - Bourns |
BOURNS |
84 |
3296P-1-101ALF |
3296 - 3/8 �� Square Trimming Potentiometer - Bourns |
BOURNS |
85 |
3296P-1-101LF |
3296 - 3/8 �� Square Trimming Potentiometer - Bourns |
BOURNS |
86 |
3296P-1-101RLF |
3296 - 3/8 �� Square Trimming Potentiometer - Bourns |
BOURNS |
87 |
3296P-1-102ALF |
3296 - 3/8 �� Square Trimming Potentiometer - Bourns |
BOURNS |
88 |
3296P-1-102LF |
3296 - 3/8 �� Square Trimming Potentiometer - Bourns |
BOURNS |
89 |
3296P-1-102RLF |
3296 - 3/8 �� Square Trimming Potentiometer - Bourns |
BOURNS |
90 |
3296P-1-103ALF |
3296 - 3/8 �� Square Trimming Potentiometer - Bourns |
BOURNS |
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