| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5406G |
GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 3.0A |
Shanghai Sunrise Electronics |
| 62 |
1N5407G |
GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 3.0A |
Shanghai Sunrise Electronics |
| 63 |
1N5408 |
3.0A, 1000V ultra fast recovery rectifier |
MCC |
| 64 |
1N5408 |
Rectifier Diode 1000V 3A |
Motorola |
| 65 |
1N5408 |
3A 1000V Standard Recovery Rectifier |
ON Semiconductor |
| 66 |
1N5408G |
GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 3.0A |
Shanghai Sunrise Electronics |
| 67 |
1N5408GP |
3.0A, 1000V ultra fast recovery rectifier |
MCC |
| 68 |
1N5408RL |
3A 1000V Standard Recovery Rectifier |
ON Semiconductor |
| 69 |
1N598 |
Silicon Rectifier Diode 1000V 0.125A |
Motorola |
| 70 |
1S1892-2C2 |
Rectifier stack, 1000V 2.4A |
TOSHIBA |
| 71 |
20SI10 |
20A 1000V Silicon Rectifier Diode |
IPRS Baneasa |
| 72 |
20SI10R |
20A 1000V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 73 |
25NF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1000V 12kW |
TOSHIBA |
| 74 |
2W005 |
SINGLE PHASE GLASS BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:2.0A |
Chenyi Electronics |
| 75 |
2W01 |
SINGLE PHASE GLASS BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:2.0A |
Chenyi Electronics |
| 76 |
2W02 |
SINGLE PHASE GLASS BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:2.0A |
Chenyi Electronics |
| 77 |
2W04 |
SINGLE PHASE GLASS BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:2.0A |
Chenyi Electronics |
| 78 |
2W06 |
SINGLE PHASE GLASS BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:2.0A |
Chenyi Electronics |
| 79 |
2W08 |
SINGLE PHASE GLASS BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:2.0A |
Chenyi Electronics |
| 80 |
2W10 |
SINGLE PHASE GLASS BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:2.0A |
Chenyi Electronics |
| 81 |
6NF11 |
Silicon alloy-diffused junction avalanche rectifier 6A 1000V 2kW |
TOSHIBA |
| 82 |
6SI10 |
6A 1000V SILICON RECTIFIER DIODE |
IPRS Baneasa |
| 83 |
6SI10R |
6A 1000V SILICON RECTIFIER DIODE, REVERSE POLARITY |
IPRS Baneasa |
| 84 |
APL1001J |
POWER MOS IV 1000V 18.0A 0.60 Ohm |
Advanced Power Technology |
| 85 |
APL1001P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000V 18.0A 0.60OHM |
Advanced Power Technology |
| 86 |
APT1001R1AVR |
POWER MOS V 1000V 9A 1.100 Ohm |
Advanced Power Technology |
| 87 |
APT1001R1BN |
POWER MOS IV 1000V 10.5A 1.10 Ohm / 1000V 10.0A 1.30 Ohm |
Advanced Power Technology |
| 88 |
APT1001R1BN |
POWER MOS IV 1000V 10.5A 1.10 Ohm / 1000V 10.0A 1.30 Ohm |
Advanced Power Technology |
| 89 |
APT1001R1BVFR |
POWER MOS V 1000V 11A 1.100 Ohm |
Advanced Power Technology |
| 90 |
APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm |
Advanced Power Technology |
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