No. |
Part Name |
Description |
Manufacturer |
61 |
HM628128LT-10 |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
62 |
HM628128LT-10L |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
63 |
HM628128LT-10SL |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
64 |
HM628128LT-12 |
120ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
65 |
HM628128LT-12L |
120ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
66 |
HM628128LT-12SL |
120ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
67 |
HM628128LT-7 |
70ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
68 |
HM628128LT-7L |
70ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
69 |
HM628128LT-7SL |
70ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
70 |
HM628128LT-8 |
85ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
71 |
HM628128LT-8L |
85ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
72 |
HM628128LT-8SL |
85ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
73 |
HM628128P-10 |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
74 |
HM628128P-12 |
120ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
75 |
HM628128P-7 |
70ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
76 |
HM628128P-8 |
85ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
77 |
HM628128R-10 |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
78 |
HM628128R-12 |
120ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
79 |
HM628128R-7 |
70ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
80 |
HM628128R-8 |
85ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
81 |
HM628128T-10 |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
82 |
HM628128T-12 |
120ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
83 |
HM628128T-7 |
70ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
84 |
HM628128T-8 |
85ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
85 |
IDT72V36110L7.5PF |
3.3V, high-density, low power, 131072 x 36-bit FIFO, 7.5ns |
IDT |
86 |
M5M4V4S40CTP-12 |
4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
87 |
M5M4V4S40CTP-15 |
4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
88 |
MBM27128-XX |
UV Erasable 131072 Bit ROM |
Fujitsu Microelectronics |
89 |
NDL7103 |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION |
NEC |
90 |
NDL7113 |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION |
NEC |
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