| No. |
Part Name |
Description |
Manufacturer |
| 61 |
AT001D4-31 |
GaAs MMIC Control FET in SOT 143 DC-2.5 GHz |
Alpha Industries Inc |
| 62 |
AT001D6-31 |
GaAs MMIC Control FET in SOT 143 DC-2.5 GHz |
Alpha Industries Inc |
| 63 |
AT002D8-31 |
GaAs MMIC Control FET in SOT 143 DC-2.5 GHz |
Alpha Industries Inc |
| 64 |
HM5425161B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 65 |
HM5425161BTT-10 |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 66 |
HM5425161BTT-75A |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 67 |
HM5425161BTT-75B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 68 |
HM5425401B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 69 |
HM5425401BTT-10 |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 70 |
HM5425401BTT-75A |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 71 |
HM5425401BTT-75B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 72 |
HM5425801B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 73 |
HM5425801BTT-10 |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 74 |
HM5425801BTT-75A |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 75 |
HM5425801BTT-75B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 76 |
HY57V641620HGLT-7 |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 143 MHz |
Hynix Semiconductor |
| 77 |
HY57V641620HGLT-7I |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 143 MHz |
Hynix Semiconductor |
| 78 |
P4KE130C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 117 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 79 |
P4KE150A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 80 |
P4KE150CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 81 |
P6KE130C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 117.0 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 82 |
STE145N65M5 |
N-channel 650 V, 0.012 Ohm typ., 143 A, MDmesh(TM) V Power MOSFET in a ISOTOP package |
ST Microelectronics |
| 83 |
V54C365164VC-7T |
High performance 143 MHz 3.3 Volt 4M x 16 synchronous DRAM, 7ns |
Mosel Vitelic Corp |
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