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Datasheets for 160

Datasheets found :: 574
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No. Part Name Description Manufacturer
61 269-D-160-M-14XX-B DFB, multimode pump laser module. Stable wavelength perfoprmance within the 1420 nm to 1510 nm (wavelength 14xx). Operating power 160 mW. Isolated, PMF. Connector SC/APC. Agere Systems
62 269-D-160-M-14XX-C DFB, multimode pump laser module. Stable wavelength perfoprmance within the 1420 nm to 1510 nm (wavelength 14xx). Operating power 160 mW. Isolated, PMF. Connector FC/APC. Agere Systems
63 2722 162 05761 VHF Narrow-BAND Circulators/Isolators, frequency range 160 to 174 MHz Philips
64 2N3439 1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. Continental Device India Limited
65 2N3440 1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. Continental Device India Limited
66 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
67 2N5551HRG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
68 2N5551HRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
69 2N5551RHRG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
70 2N5551RHRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
71 2N5551RUBG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
72 2N5551RUBT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
73 2N5551SHRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
74 2N5551UB1 Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
75 2N5551UBG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
76 2N5551UBT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
77 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
78 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
79 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
80 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
81 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
82 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
83 3EZ160D 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-20% tolerance. Jinan Gude Electronic Device
84 3EZ160D1 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-1% tolerance. Jinan Gude Electronic Device
85 3EZ160D1 3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 1% tolerance. Motorola
86 3EZ160D10 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-10% tolerance. Jinan Gude Electronic Device
87 3EZ160D10 3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 10% tolerance. Motorola
88 3EZ160D2 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-2% tolerance. Jinan Gude Electronic Device
89 3EZ160D2 3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 2% tolerance. Motorola
90 3EZ160D3 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-3% tolerance. Jinan Gude Electronic Device


Datasheets found :: 574
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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