| No. |
Part Name |
Description |
Manufacturer |
| 61 |
PD57018S-E |
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
| 62 |
PD57018STR-E |
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
| 63 |
PD57018TR-E |
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
| 64 |
PD57030-E |
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
| 65 |
PD57030S-E |
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
| 66 |
PD57045-E |
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
| 67 |
PD57045S-E |
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
| 68 |
PD57045TR-E |
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
| 69 |
PD57060-E |
60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
| 70 |
PD57060S-E |
60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
| 71 |
PD57060TR-E |
60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
| 72 |
PD57070S-E |
70W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package |
ST Microelectronics |
| 73 |
Q62702-F1487 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 74 |
Q62702-F1498 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 75 |
Q62702-F1613 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 76 |
Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 77 |
Q62702-F1628 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 78 |
Q62702-F1645 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 79 |
Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 80 |
Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 81 |
Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 82 |
Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 83 |
Q62702-F1776 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 84 |
Q62702-F940 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 85 |
RCA-41024 |
1W 1GHz Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 86 |
RHF330 |
Rad-Hard 1GHz low noise CMOS Single Opamp |
ST Microelectronics |
| 87 |
RHF330K-01V |
Rad-Hard 1GHz low noise CMOS Single Opamp |
ST Microelectronics |
| 88 |
RHF330K1 |
Rad-Hard 1GHz low noise CMOS Single Opamp |
ST Microelectronics |
| 89 |
SA601 |
Low voltage LNA and mixer - 1GHz |
Philips |
| 90 |
SA601DK |
Low voltage LNA and mixer - 1GHz |
Philips |
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