| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2V050 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 82 V @ 1mA DC test current. |
NTE Electronics |
| 62 |
2V060 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 100 V @ 1mA DC test current. |
NTE Electronics |
| 63 |
2V075 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 120 V @ 1mA DC test current. |
NTE Electronics |
| 64 |
2V095 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 150 V @ 1mA DC test current. |
NTE Electronics |
| 65 |
2V115 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 171 V @ 1mA DC test current. |
NTE Electronics |
| 66 |
2V130 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
| 67 |
2V150 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 240 V @ 1mA DC test current. |
NTE Electronics |
| 68 |
2V250 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
| 69 |
2V275 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
| 70 |
2V300 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
| 71 |
2V420 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 680 V @ 1mA DC test current. |
NTE Electronics |
| 72 |
2V480 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
| 73 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 74 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 75 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 76 |
524V13 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
| 77 |
524V15 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 240 V @ 1mA DC test current. |
NTE Electronics |
| 78 |
524V17 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 270 V @ 1mA DC test current. |
NTE Electronics |
| 79 |
524V25 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
| 80 |
524V27 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
| 81 |
524V30 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
| 82 |
524V42 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 680 V @ 1mA DC test current. |
NTE Electronics |
| 83 |
524V48 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
| 84 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 85 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 86 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 87 |
8785 |
��15KV ESD-PROTECTED, 1mA, 3 TO 5.5V, 250KBPS, RS-232 TRANSCEIVER WITH STAND-BY |
ST Microelectronics |
| 88 |
BAX12 |
Silicon whiskerless diode, controlled avalanche diode, avalanche voltage 120-175V at 1mA |
Mullard |
| 89 |
BC170A |
Si-PLANAR-npn TRANSISTOR h21E=β=30...100 at 1mA |
IPRS Baneasa |
| 90 |
BC170B |
Si-PLANAR-npn TRANSISTOR h21E=β=60...250 at 1mA |
IPRS Baneasa |
| | | |
