| No. |
Part Name |
Description |
Manufacturer |
| 61 |
MMBZ5251B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 22.0 V. Test current 5.6 mA. |
Chenyi Electronics |
| 62 |
MMBZ5251B |
Surface mount zener diode. Nominal zener voltage 22.0V, test current 5.6mA. |
Jinan Gude Electronic Device |
| 63 |
MV1634 |
Silicon Epicap diode, epitaxial passivated tuning diode designed for AFC applications in radio, TV, 22.0pF |
Motorola |
| 64 |
MV2107 |
Voltage-Variable Capacitance Silicon EPICAP Diode, 30 Volts 22.0pF |
Motorola |
| 65 |
NTE141A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 11.5V. Zener test current Izt = 22.0mA. |
NTE Electronics |
| 66 |
NTE5263AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 22.0V. Zener test current Izt = 570mA. |
NTE Electronics |
| 67 |
PD110-10HA |
DC/DC converter. Maximum output power 110 W. Output #1: Vnom 5V, Imin 0.0A, Imax 22.0A. |
International Power Sources |
| 68 |
PD110-10HC |
DC/DC converter. Maximum output power 110 W. Output #1: Vnom 5V, Imin 0.0A, Imax 22.0A. |
International Power Sources |
| 69 |
PD110-10LA |
DC/DC converter. Maximum output power 110 W. Output #1: Vnom 5V, Imin 0.0A, Imax 22.0A. |
International Power Sources |
| 70 |
PD110-10LC |
DC/DC converter. Maximum output power 110 W. Output #1: Vnom 5V, Imin 0.0A, Imax 22.0A. |
International Power Sources |
| 71 |
PD110-10MA |
DC/DC converter. Maximum output power 110 W. Output #1: Vnom 5V, Imin 0.0A, Imax 22.0A. |
International Power Sources |
| 72 |
PD110-10MC |
DC/DC converter. Maximum output power 110 W. Output #1: Vnom 5V, Imin 0.0A, Imax 22.0A. |
International Power Sources |
| 73 |
PM110-10-1A |
Medical switching power supply. Maximum output power 110 W. Output #1: Vnom 3.3V, Imin 0.0A, Imax 22.0A. |
International Power Sources |
| 74 |
PM110-10A |
Medical switching power supply. Maximum output power 110 W. Output #1: Vnom 5.0V, Imin 0.0A, Imax 22.0A. |
International Power Sources |
| 75 |
PSMN022-30BL |
N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK |
Nexperia |
| 76 |
PSMN022-30BL |
N-channel 30 V 22.6 mΩ logic level MOSFET in D2PAK |
NXP Semiconductors |
| 77 |
QPA3230 |
45 - 1218 MHz, 22.8 dB GaAs / GaN Power Doubler Hybrid Amplifier |
Qorvo |
| 78 |
SIDC07D60AF6 |
Diodes - HV Chips - SIDC07D60AF6, 600V, 22.5A |
Infineon |
| 79 |
SIDC07D60F6 |
Diodes - HV Chips - SIDC07D60F6, 600V, 22.5A |
Infineon |
| 80 |
STL34N65M5 |
N-channel 650 V, 0.99 Ohm typ., 22.5 A, MDmesh(TM) V Power MOSFET in a PowerFLAT 8x8 HV |
ST Microelectronics |
| 81 |
STL36N55M5 |
N-channel 550 V, 0.066 Ohm typ., 22.5 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package |
ST Microelectronics |
| 82 |
STL38N65M5 |
N-channel 650 V, 0.09 Ohm typ., 22.5 A, MDmesh(TM) V Power MOSFET in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 83 |
STL42N65M5 |
N-channel 650 V, 0.070 Ohm typ., 22.5 A MDmesh(TM) V Power MOSFET in a PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 84 |
STL45N65M5 |
N-channel 650 V, 0.075 Ohm typ., 22.5 A MDmesh(TM) V Power MOSFET in a PowerFLAT 8x8 HV package |
ST Microelectronics |
| 85 |
STL57N65M5 |
N-channel 650 V, 0.061 Ohm typ., 22.5 A MDmesh(TM) V Power MOSFET in a PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 86 |
STL8DN6LF3 |
Automotive-grade dual N-channel 60 V, 22.5 mOhm typ., 7.8 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 double island package |
ST Microelectronics |
| 87 |
TWXFZ |
Watercooled power capacitors internal cooling, 14KVp to 22.5KVp |
Vishay |
| 88 |
ZPD22 |
Diode Zener Single 22.05V 5% 500mW 2-Pin DO-204AH |
New Jersey Semiconductor |
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