| No. |
Part Name |
Description |
Manufacturer |
| 61 |
APD-240M021 |
240 Character Display with Drive Electronics & Controller, Parallel Interface, Compatible with IEEE 3402-08-240N, ASCII Character Set, Wide Viewing Angle, Rugged Design, Slim Profile, Flicker Free Refresh |
Vishay |
| 62 |
APT10025JLC |
POWER MOS VI 1000V 34A 0.250 Ohm |
Advanced Power Technology |
| 63 |
APT10025JVFR |
POWER MOS V 1000V 34A 0.250 Ohm |
Advanced Power Technology |
| 64 |
APT10025JVR |
POWER MOS V 1000V 34A 0.250 Ohm |
Advanced Power Technology |
| 65 |
ASM3P5821A |
3.3 V, 20 MHz to 34 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 66 |
ATAR510 |
4 KB ROM, 2 Timer, SSI, 34 I/O Lines, V |
Atmel |
| 67 |
BGE788 |
750 MHz, 34 dB gain push-pull amplifier |
Philips |
| 68 |
BGE788C |
750 MHz, 34 dB gain push-pull amplifier |
NXP Semiconductors |
| 69 |
BGE788C |
750 MHz, 34 dB gain push-pull amplifier |
Philips |
| 70 |
BGY588C |
550 MHz, 34.5 dB gain push-pull amplifier |
NXP Semiconductors |
| 71 |
BGY588N |
550 MHz, 34.5 dB gain push-pull amplifier |
Philips |
| 72 |
BGY58A |
Hybrid amplifier module for use as 34dB line extender in CATV systems operating at frequencies up to 330MHz |
Philips |
| 73 |
BGY78 |
Hybrid amplifier module for use as 34dB line extender in CATV systems operating at frequencies up to 450MHz |
Philips |
| 74 |
BGY888 |
860 MHz, 34 dB gain push-pull amplifier |
NXP Semiconductors |
| 75 |
BGY888 |
860 MHz, 34 dB gain push-pull amplifier |
Philips |
| 76 |
BQ24765RUVR |
SMBus Controlled Battery Charger with Integrated FETs 34-VQFN -40 to 155 |
Texas Instruments |
| 77 |
BQ24765RUVT |
SMBus Controlled Battery Charger with Integrated FETs 34-VQFN -40 to 155 |
Texas Instruments |
| 78 |
BUK9M34-100E |
N-channel 100 V, 34 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
| 79 |
BUZ22 SMD |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL |
Infineon |
| 80 |
BUZ22SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,D�PAK , RDSon=0.055 Ohm, 34A, NL |
Infineon |
| 81 |
BZW06-324B |
Diode TVS Single Uni-Dir 342V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 82 |
BZW06-342 |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 342V |
Fagor |
| 83 |
BZW06-342 |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 342V |
SGS Thomson Microelectronics |
| 84 |
BZW06-342B |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 342V |
SGS Thomson Microelectronics |
| 85 |
BZW06-356 |
Diode TVS Single Uni-Dir 342V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 86 |
CA2810C |
CA2810C 34 dB, 10-450 MHz, 800 mWatt Wideband Linear Amplifier - Archived |
Motorola |
| 87 |
CA2813 |
Wide Band RF Linear Hybrid Amplifier 34dB Gain, 40-300MHz, low VSWR for 75 ohms system |
TRW |
| 88 |
CA2830 |
Thin Film RF Linear Hybrid Amplifier High Gain 34.5dB, 1W Output power at 28V |
TRW |
| 89 |
CA2830C |
CA2830C 34.5 dB, 5-200 MHz, 800 mWatt Wideband Linear Amplifiers - Archived |
Motorola |
| 90 |
CA2830H |
Wideband Linear Amplifier 34.5dB, 5-200MHz, 800mW |
Motorola |
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