| No. |
Part Name |
Description |
Manufacturer |
| 61 |
SG53150.0000M |
Crystal oscillator, 50.0000MHz |
Epson Company |
| 62 |
SG531PH50.0000M |
Crystal oscillator, 50.0000MHz |
Epson Company |
| 63 |
SMBJ5922A |
1.5W silicon surface mount zener diode. Zener voltage 7.5 V. Test current 50.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 64 |
SMBJ5922B |
1.5W silicon surface mount zener diode. Zener voltage 7.5 V. Test current 50.0 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 65 |
SMBJ5922C |
1.5W silicon surface mount zener diode. Zener voltage 7.5 V. Test current 50.0 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 66 |
SMBJ5922D |
1.5W silicon surface mount zener diode. Zener voltage 7.5 V. Test current 50.0 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 67 |
SR150-T4 |
Reverse voltage: 50.00V; 1.0A schottky barrier rectifier |
Won-Top Electronics |
| 68 |
TIP110 |
50.000W Darlington NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 500 hFE. |
Continental Device India Limited |
| 69 |
TIP111 |
50.000W Darlington NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 hFE. |
Continental Device India Limited |
| 70 |
TIP112 |
50.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 500 hFE. |
Continental Device India Limited |
| 71 |
TIP115 |
50.000W Darlington PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 500 hFE. |
Continental Device India Limited |
| 72 |
TIP116 |
50.000W Darlington PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 500 hFE. |
Continental Device India Limited |
| 73 |
TIP117 |
50.000W Darlington PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 500 hFE. |
Continental Device India Limited |
| 74 |
TM10481A-G |
GRAPHIC TYPE MONOCHROME LCD MODULE resolution: 104x81; module size: 50.0x48.0x2.85; viewing size: 47.0x36.0; dot pitch: 0.39x0.39; dot size: 0.36x0.36; controller: S6B0718; |
TIANMA Microelectronics |
| 75 |
TM162B |
CHARACTER TYPE MONOCHROME LCD MODULE display format: 16x2; module size: 66.0x37.0x11.3; viewing size: 50.0x12.0; character size: 2.54x4.00; dot size: 0.46x0.43; controller: KS0066U or equivalent; |
TIANMA Microelectronics |
| 76 |
TM162Y |
CHARACTER TYPE MONOCHROME LCD MODULE display format: 16x2; module size: 66.0x37.0x11.3; viewing size: 50.0x12.0; character size: 4.0x2.54; dot size: 0.46x0.43; controller: ; |
TIANMA Microelectronics |
| 77 |
UVP-2057 |
2.0 inch ( 50.80mm ) 5X7 DOT MATRIX LED DISPLAY UVP-2X57A SERIES |
Unity Opto Technology |
| 78 |
UVP-2057A |
2.0 inch ( 50.80mm ) 5X7 DOT MATRIX LED DISPLAY UVP-2X57A SERIES |
Unity Opto Technology |
| 79 |
UVP-2157A |
2.0 inch ( 50.80mm ) 5X7 DOT MATRIX LED DISPLAY UVP-2X57A SERIES |
Unity Opto Technology |
| 80 |
UVP-2344 |
2.0 inch ( 50.80mm ) 4X4 DOT MATRIX LED DISPLAY |
Unity Opto Technology |
| 81 |
UVP-2X44 |
2.0 inch ( 50.80mm ) 4X4 DOT MATRIX LED DISPLAY |
Unity Opto Technology |
| 82 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 83 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 84 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 85 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 86 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 87 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 88 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 89 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 90 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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