No. |
Part Name |
Description |
Manufacturer |
61 |
1N297 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
62 |
1N297A |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
63 |
1N298 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
64 |
1N298A |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
65 |
1N3064 |
50 V, 500 mW ultra fast low capacitance diode |
BKC International Electronics |
66 |
1N3125 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
67 |
1N314 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
68 |
1N3146 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
69 |
1N3154 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.130 V. 500 W. |
Motorola |
70 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
71 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
72 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
73 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
74 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
75 |
1N3157 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.013 V. 500 W. |
Motorola |
76 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
77 |
1N3287WUSN |
6 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
78 |
1N3465 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
79 |
1N3466 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
80 |
1N3467 |
15 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
81 |
1N3468 |
15 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
82 |
1N3470 |
35 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
83 |
1N3483 |
8 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
84 |
1N355 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
85 |
1N3592 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
86 |
1N3595 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
87 |
1N3595-1 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
88 |
1N3666M1 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
89 |
1N3666M2 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
90 |
1N367 |
15 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
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