No. |
Part Name |
Description |
Manufacturer |
61 |
ATMEGA8L |
8-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, 6 or 8 Channel 10-bit A/D-converter. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation |
Atmel |
62 |
BGY22 |
UHF Power Amplifier Module 380 to 512 MHz freq. range |
Philips |
63 |
C80C251TQ |
High-performance CHMOS microcontroller. 512 bytes RAM, without ROM, 24 MHz |
Intel |
64 |
C83C251SP16 |
High-performance CHMOS microcontroller. 8 Kbytes ROM, 512 bytes RAM, 16MHz |
Intel |
65 |
C83C251SQ16 |
High-performance CHMOS microcontroller. 16 Kbytes ROM, 512 bytes RAM, 16MHz |
Intel |
66 |
C83C251TP |
High-performance CHMOS microcontroller. 512 bytes RAM, 8 Kbytes ROM, 24 MHz |
Intel |
67 |
C83C251TQ |
High-performance CHMOS microcontroller. 512 bytes RAM, 16 Kbytes ROM, 24 MHz |
Intel |
68 |
C87C251SP16 |
High-performance CHMOS microcontroller. 8 Kbytes OTPROM/EPROM, 512 bytes RAM, 16MHz |
Intel |
69 |
C87C251SQ16 |
High-performance CHMOS microcontroller. 16 Kbytes OTPROM/EPROM, 512 bytes RAM, 16MHz |
Intel |
70 |
CY7C0831AV-133AXI |
FLEx18� 3.3 V 128 K / 256 K / 512 K � 18 Synchronous Dual-Port RAM |
Cypress |
71 |
CY7C0832AV-133AXI |
FLEx18� 3.3 V 128 K / 256 K / 512 K � 18 Synchronous Dual-Port RAM |
Cypress |
72 |
CY7C0832AV-167AXC |
FLEx18� 3.3 V 128 K / 256 K / 512 K � 18 Synchronous Dual-Port RAM |
Cypress |
73 |
CY7C0832BV-133AI |
FLEx18� 3.3 V 128 K / 256 K / 512 K � 18 Synchronous Dual-Port RAM |
Cypress |
74 |
CY7C0833V-100BBI |
FLEx18� 3.3 V 128 K / 256 K / 512 K � 18 Synchronous Dual-Port RAM |
Cypress |
75 |
CY7C1355C-133AXC |
9-Mbit (256 K � 36 / 512 K � 18) Flow-Through SRAM with NoBL� Architecture |
Cypress |
76 |
CY7C1355C-133AXCT |
9-Mbit (256 K � 36 / 512 K � 18) Flow-Through SRAM with NoBL� Architecture |
Cypress |
77 |
CY7C1357C-100BZC |
9-Mbit (256 K � 36 / 512 K � 18) Flow-Through SRAM with NoBL� Architecture |
Cypress |
78 |
CY7C1357C-133AXC |
9-Mbit (256 K � 36 / 512 K � 18) Flow-Through SRAM with NoBL� Architecture |
Cypress |
79 |
CY7C1357C-133AXCT |
9-Mbit (256 K � 36 / 512 K � 18) Flow-Through SRAM with NoBL� Architecture |
Cypress |
80 |
DS1388 |
I2C RTC/Supervisor with Trickle Charger and 512 Bytes EEPROM |
MAXIM - Dallas Semiconductor |
81 |
DS1388Z-3 |
I2C RTC/Supervisor with Trickle Charger and 512 Bytes EEPROM |
MAXIM - Dallas Semiconductor |
82 |
DS1388Z-3+ |
I2C RTC/Supervisor with Trickle Charger and 512 Bytes EEPROM |
MAXIM - Dallas Semiconductor |
83 |
DS1388Z-3+T&R |
I²C RTC/Supervisor with Trickle Charger and 512 Bytes EEPROM |
MAXIM - Dallas Semiconductor |
84 |
DS1388Z-33 |
I2C RTC/Supervisor with Trickle Charger and 512 Bytes EEPROM |
MAXIM - Dallas Semiconductor |
85 |
DS1388Z-33+ |
I2C RTC/Supervisor with Trickle Charger and 512 Bytes EEPROM |
MAXIM - Dallas Semiconductor |
86 |
DS1388Z-33+T&R |
I²C RTC/Supervisor with Trickle Charger and 512 Bytes EEPROM |
MAXIM - Dallas Semiconductor |
87 |
DS1388Z-5 |
I2C RTC/Supervisor with Trickle Charger and 512 Bytes EEPROM |
MAXIM - Dallas Semiconductor |
88 |
DS1388Z-5+ |
I2C RTC/Supervisor with Trickle Charger and 512 Bytes EEPROM |
MAXIM - Dallas Semiconductor |
89 |
EPM3512AFC256-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 208 I/O pins, 10ns |
Altera Corporation |
90 |
EPM3512AFC256-7 |
Programmable logic , 512 macrocells, 32 logic array blocks, 208 I/O pins, 7ns |
Altera Corporation |
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