No. |
Part Name |
Description |
Manufacturer |
61 |
5962R3829437BNA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
62 |
5962R3829437BNC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
63 |
5962R3829437BNX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish optional. |
Aeroflex Circuit Technology |
64 |
5962R3829437BXA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
65 |
5962R3829437BXC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
66 |
5962R3829437BXX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish optional. |
Aeroflex Circuit Technology |
67 |
5962R3829437SNA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish solder. |
Aeroflex Circuit Technology |
68 |
5962R3829437SNC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish gold. |
Aeroflex Circuit Technology |
69 |
5962R3829437SNX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish optional. |
Aeroflex Circuit Technology |
70 |
5962R3829437SXA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish solder. |
Aeroflex Circuit Technology |
71 |
5962R3829437SXC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish gold. |
Aeroflex Circuit Technology |
72 |
5962R3829437SXX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish optional. |
Aeroflex Circuit Technology |
73 |
AS29F040-55LC |
5V 512K x 8 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
74 |
AS29F040-55LI |
5V 512K x 8 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
75 |
AS29F040-55TC |
5V 512K x 8 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
76 |
AS29F040-55TI |
5V 512K x 8 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
77 |
AS29F200B-55SC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
78 |
AS29F200B-55SI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
79 |
AS29F200B-55TC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
80 |
AS29F200B-55TI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
81 |
AS29F200T-55SC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
82 |
AS29F200T-55SI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
83 |
AS29F200T-55TC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
84 |
AS29F200T-55TI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
85 |
CY62128-55SC |
128K x 8 static RAM, standby current 10mA, 55ns |
Cypress |
86 |
CY62128-55VC |
128K x 8 static RAM, standby current 10mA, 55ns |
Cypress |
87 |
CY62148V-55SC |
512K x 8 static RAM, 55ns |
Cypress |
88 |
CY62148V-55ZC |
512K x 8 static RAM, 55ns |
Cypress |
89 |
CY62148VL-55SC |
512K x 8 static RAM, 55ns |
Cypress |
90 |
CY62148VL-55ZC |
512K x 8 static RAM, 55ns |
Cypress |
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