No. |
Part Name |
Description |
Manufacturer |
61 |
2N1910 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
62 |
2N1911 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
63 |
2N1912 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
64 |
2N1913 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
65 |
2N1914 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
66 |
2N1915 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
67 |
2N1916 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts |
Powerex Power Semiconductors |
68 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
69 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
70 |
2N5757 |
2.5-A silicon triac. Voltage(typ) 600 V. |
General Electric Solid State |
71 |
2N6071 |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
72 |
2N6071A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
73 |
2N6071B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
74 |
2N6073A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
75 |
2N6073B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
76 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
77 |
2N6075A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
78 |
2N6075B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
79 |
2N6344A |
12-A silicon triac. 600 V. |
General Electric Solid State |
80 |
2N6348A |
12-A silicon triac. 600 V. |
General Electric Solid State |
81 |
2N6398 |
Thyristor, 12 amperes, 600 volt |
Teccor Electronics |
82 |
2N6404 |
Thyristor, 16 amperes, 600 volt |
Teccor Electronics |
83 |
2N6508 |
Thyristor, 25 amperes, 600 volt |
Teccor Electronics |
84 |
AM106S |
1.0 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 600 V. |
Comchip Technology |
85 |
AM156S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 600 V. |
Comchip Technology |
86 |
AQV216SX |
PhotoMOS relay, GU (general use) type [1-channel (form A ) type]. Output rating: load voltage 600 V, load current 40 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
87 |
AQV216SZ |
PhotoMOS relay, GU (general use) type [1-channel (form A ) type]. Output rating: load voltage 600 V, load current 40 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
88 |
AQW216 |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Through hole terminal. Tube packing style. |
Matsushita Electric Works(Nais) |
89 |
AQW216A |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Surface-mount terminal. Tube packing style. |
Matsushita Electric Works(Nais) |
90 |
AQW216AX |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Surface-mount terminal. Tape and reel packing style. |
Matsushita Electric Works(Nais) |
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